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參數(shù)資料
| 型號： | ST303S10PFJ0 |
| 英文描述： | Stratix GX FPGA 40K 20-FBGA |
| 中文描述： | 1000V 471A逆變晶閘管采用TO - 209AE（至118）封裝 |
| 文件頁數(shù)： | 7/9頁 |
| 文件大?。?/td> | 173K |
| 代理商： | ST303S10PFJ0 |
ST303C..L Series
7
www.irf.com
Bulletin I25186 rev. B 04/00
Fig. 9 - On-state Voltage Drop Characteristics
Fig. 10 - Thermal Impedance Z
thJ-hs
Characteristics
Fig. 11 - Reverse Recovered Charge Characteristics
Fig. 12 - Reverse Recovery Current Characteristics
Fig. 13 - Frequency Characteristics
100
1000
10000
0
1
2
3
4
5
6
7
8
T = 25
°
C
T = 125
°
C
I
Instantaneous On-state Voltage (V)
ST303C..L Series
3 0
4 0
5 0
6 0
7 0
8 0
9 0
10 0
11 0
12 0
13 0
14 0
15 0
16 0
17 0
18 0
10
2 0
3 0
4 0
50
6 0
7 0
8 0
9 0
10 0
M
Rate Of Fall Of Forw ard C urre nt - di/dt (A /μs)
200 A
ST30 3C ..L Se rie s
T = 125
°
C
I = 1000 A
500 A
300 A
100 A
80
100
120
140
160
180
200
220
240
260
280
300
320
10
20
30
40
50
60
70
80
90 100
200 A
Rate Of Fall Of On-state Current - di/dt (A/μs)
M
ST303C..L Series
T = 125
°
C
I = 1000 A
500 A
300 A
100 A
E1
1E1
1 E2
1 E3
1 E4
50 Hz
400
2500
100
Pulse Base w idth (μs)
1000
1500
3000
200
500
ST303C..L Series
Sinusoidal pulse
T = 55
°
C
Snubber circuit
R = 10 ohms
C = 0.47 μF
V = 80% V
DRM
2000
tp
0 .0 01
0.0 1
0 .1
1
0 .0 01
0 .0 1
0 .1
1
1 0
Square W ave Pulse D uratio n (s)
t
T
Steady State V alue
R = 0.11 K/W
(Sin gle Side C o oled)
R = 0.05 K/W
(D ouble Side C o oled)
(D C O peratio n)
ST303C ..L Serie s
1 E2
1 E3
1 E4
1 E1
1 E2
1 E3
1E4
1E4
50 Hz
400
2500
100
Pulse Basew idth (μs)
P
1000
1500
3000
200
500
ST303C..L Series
Sinusoidal pulse
T = 40
°
C
2000
Snubber circuit
R = 10 ohms
C = 0.47 μF
V = 80% V
DRM
tp
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