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參數(shù)資料
| 型號(hào)： | ST300S08P0 |
| 英文描述： | MAX II CPLD 1270 LE 256-MBGA |
| 中文描述： | 800V的300?相位控制晶閘管采用TO - 209AE（至118）封裝 |
| 文件頁(yè)數(shù)： | 7/7頁(yè) |
| 文件大?。?/td> | 86K |
| 代理商： | ST300S08P0 |
ST300C..C Series
7
www.irf.com
Bulletin I25157 rev. C 04/00
Fig. 9 - On-state Voltage Drop Characteristics
Fig. 10 - Thermal Impedance Z
thJ-hs
Characteristics
Fig. 11 - Gate Characteristics
Instantaneous On-state Voltage (V)
I
Square Wave Pulse Duration (s)
T
t
Instantaneous Gate Current (A)
I
100
1000
10000
0
1
2
3
4
5
6
7
8
9
T = 25
C
T = 125
C
ST300C..C Series
0.001
0.01
0.1
0.001
0.01
0.1
1
10
Steady State Value
R = 0.09 K/W
(Single Side Cooled)
R = 0.04 K/W
(Double Side Cooled)
(DC Operation)
ST300C..C Series
0.1
0.001
1
10
100
0.01
0.1
1
10
100
VGD
IGD
(b)
(a)
T
C
T
C
T
C
(2) (3)
a) Recommended load line for
rated di/dt : 20V, 10ohms; tr<=1 μs
b) Recommended load line for
<=30% rated di/dt : 10V, 10ohms
tr<=1 μs
Frequency Limited by PG(AV)
(1)
(1) PGM = 10W, tp = 4ms
(2) PGM = 20W, tp = 2ms
(3) PGM = 40W, tp = 1ms
(4) PGM = 60W, tp = 0.66ms
Device: ST300C..C Series
Rectangular gate pulse
(4)
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