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參數(shù)資料
| 型號(hào)： | ST300S08M1 |
| 廠商： | International Rectifier |
| 英文描述： | PHASE CONTROL THYRISTORS |
| 中文描述： | 相位控制晶閘管 |
| 文件頁(yè)數(shù)： | 3/8頁(yè) |
| 文件大?。?/td> | 78K |
| 代理商： | ST300S08M1 |
ST300S Series
3
Bulletin I25158 rev. B 01/94
www.irf.com
Parameter
ST300S
Units Conditions
Switching
μs
dv/dt
Maximum critical rate of rise of
off-state voltage
I
RRM
I
DRM
Max. peak reverse and off-state
leakage current
Blocking
500
V/μs
T
J
= T
J
max. linear to 80% rated V
DRM
Parameter
ST300S
Units Conditions
50
mA
T
J
= T
J
max, rated V
DRM
/V
RRM
applied
P
GM
P
G(AV)
Maximum average gate power
I
GM
+V
GM
Maximum peak positive
gate voltage
Maximum peak gate power
10.0
T
J
= T
J
max, t
p
≤
5ms
T
J
= T
J
max, f = 50Hz, d% = 50
T
J
= T
J
max, t
p
≤
5ms
2.0
Max. peak positive gate current
3.0
A
-V
GM
Maximum peak negative
gate voltage
I
GT
DC gate current required
T
J
= - 40°C
T
J
= 25°C
T
J
= 125°C
T
J
= - 40°C
T
J
= 25°C
T
J
= 125°C
to trigger
mA
V
GT
DC gate voltage required
to trigger
V
I
GD
DC gate current not to trigger
10.0
mA
Parameter
ST300S
Units Conditions
20
5.0
Triggering
V
GD
DC gate voltage not to trigger
0.25
V
T
J
= T
J
max
TYP.
MAX.
200
-
100
50
200
-
2.5
-
1.8
1.1
3
-
Max. gate current/ voltage not to
trigger is the max. value which
will not trigger any unit with rated
V
DRM
anode-to-cathode applied
V
T
J
= T
J
max, t
p
≤
5ms
Max. required gate trigger/ cur-
rent/ voltage are the lowest value
which will trigger all units 12V
anode-to-cathode applied
W
di/dt
Max. non-repetitive rate of rise
of turned-on current
Gate drive 20V, 20
, t
r
≤
1μs
T
J
= T
J
max, anode voltage
≤
80% V
DRM
Gate current 1A, di
g
/dt = 1A/μs
V
d
= 0.67% V
DRM
,
T
J
= 25°C
I
TM
= 550A, T
J
= T
J
max, di/dt
= 40A/μs, V
R
= 50V
dv/dt
= 20V/μs, Gate 0V 100
,
t
p
= 500μs
t
d
Typical delay time
1.0
t
q
Typical turn-off time
100
1000
A/μs
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