參數(shù)資料
型號: ST25W16M3TR
廠商: 意法半導(dǎo)體
元件分類: DRAM
英文描述: 16 Kbit Serial I2C Bus EEPROM with User-Defined Block Write Protection
中文描述: 16千位串行I2C總線的EEPROM與用戶定義的塊寫保護(hù)
文件頁數(shù): 16/17頁
文件大?。?/td> 126K
代理商: ST25W16M3TR
SO-a
E
N
CP
B
e
A
D
C
L
A1
α
1
H
h x 45
Symb
mm
inches
Typ
Min
Max
Typ
Min
Max
A
1.35
1.75
0.053
0.069
A1
0.10
0.25
0.004
0.010
B
0.33
0.51
0.013
0.020
C
0.19
0.25
0.007
0.010
D
4.80
5.00
0.189
0.197
E
3.80
4.00
0.150
0.157
e
1.27
0.050
H
5.80
6.20
0.228
0.244
h
0.25
0.50
0.010
0.020
L
0.40
0.90
0.016
0.035
α
0
°
8
°
0
°
8
°
N
8
8
CP
0.10
0.004
Drawing is not to scale.
SO8 - 8 lead Plastic Small Outline, 150 mils body width
16/17
ST24/25C16, ST24/25W16
相關(guān)PDF資料
PDF描述
ST25W16M5TR MOSFET, DUAL, PP, POWERPAK; Transistor type:MOSFET; Current, Id cont:7A; Resistance, Rds on:0.02R; Voltage, Vgs Rds on measurement:10V; Case style:SO-8 PowerPak; Charge, gate p channel:49nC; Current, Idm pulse:30A; Depth, RoHS Compliant: Yes
ST25W16M6TR MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-20V; Continuous Drain Current, Id:-3.6A; On-Resistance, Rds(on):0.065ohm; Rds(on) Test Voltage, Vgs:-4.5V; Package/Case:MICRO FOOT; Leaded Process Compatible:No
ST24C16M5TR MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-20V; Continuous Drain Current, Id:-3.6A; On-Resistance, Rds(on):0.065ohm; Rds(on) Test Voltage, Vgs:-4.5V; Package/Case:MICRO FOOT; Leaded Process Compatible:Yes
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