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參數(shù)資料
| 型號： | ST25W16B1TR |
| 廠商： | 意法半導體 |
| 英文描述： | MOSFET, DUAL NN POWERPAKMOSFET, DUAL NN POWERPAK; Transistor type:MOSFET; Transistor polarity:Dual N; Voltage, Vds max:100V; Case style:PowerPak SO-8; Current, Id cont:1.8A; Current, Idm pulse:10A; Power, Pd:1.3W; Resistance, Rds |
| 中文描述： | 16千位串行I2C總線的EEPROM與用戶定義的塊寫保護 |
| 文件頁數(shù)： | 2/17頁 |
| 文件大?。?/td> | 126K |
| 代理商： | ST25W16B1TR |
SDA
VSS
SCL
MODE/WC
PB0
PB1
PRE
VCC
AI00867B
ST24x16
ST25x16
1
2
3
4
8
7
6
5
Figure 2A. DIP Pin Connections
1
2
3
4
AI00500B
8
7
6
5
SDA
VSS
SCL
MODE/WC
PB0
PB1
PRE
VCC
ST24x16
ST25x16
Figure 2B. SO8 Pin Connections
ance of one million erase/write cycles with a data
retention of 40 years. The ST25x16 operates with
a power supply value as low as 2.5V. Both Plastic
Dual-in-Line and Plastic Small Outline packages
are available.
The memories are compatible with the I
2
C stand-
ard, two wire serial interface which uses a bi-direc-
tional data bus and serial clock. The memories
DESCRIPTION
(cont’d)
carry a built-in 4 bit, unique device identification
code (1010) corresponding to the I
2
C bus defini-
tion. The memories behave as slave devices in the
I
2
C protocol with all memory operations synchro-
nized by the serial clock. Read and write operations
are initiated by a START condition generated by the
bus master. The START condition is followed by a
stream of 4 bits (identification code 1010), 3 block
select bits, plus one read/write bit and terminated
by an acknowledge bit. When writing data to the
Symbol
Parameter
Value
Unit
T
A
Ambient Operating Temperature
–40 to 125
°
C
T
STG
Storage Temperature
–65 to 150
°
C
T
LEAD
Lead Temperature, Soldering
(SO8)
(PSDIP8)
40 sec
10 sec
215
260
°
C
V
IO
Input or Output Voltages
–0.6 to 6.5
V
V
CC
Supply Voltage
–0.3 to 6.5
V
V
ESD
Electrostatic Discharge Voltage (Human Body model)
(2)
4000
V
Electrostatic Discharge Voltage (Machine model)
(3)
500
V
Notes:
1. Except for the rating "Operating Temperature Range", stresses above those listed in the Table "Absolute Maximum Ratings"
may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other
conditions above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum
Rating conditions for extended periods may affect device reliability. Refer also to the STMicroelectronics SURE Program and
other relevant quality documents.
2. 100pF through 1500
; MIL-STD-883C, 3015.7
3. 200pF through 0
; EIAJ IC-121 (condition C)
Table 2. Absolute Maximum Ratings
(1)
2/17
ST24/25C16, ST24/25W16
相關PDF資料 |
PDF描述 |
|---|---|
| ST25W16B3TR | 16 Kbit Serial I2C Bus EEPROM with User-Defined Block Write Protection |
| ST25W16B5TR | 16 Kbit Serial I2C Bus EEPROM with User-Defined Block Write Protection |
| ST25W16B6TR | MOSFET; Transistor Polarity:Dual P Channel; Drain Source Voltage, Vds:-30V; Continuous Drain Current, Id:-6.4A; Package/Case:PowerPAK 1212-8 |
| ST25W16M1TR | 16 Kbit Serial I2C Bus EEPROM with User-Defined Block Write Protection |
| ST25W16M3TR | 16 Kbit Serial I2C Bus EEPROM with User-Defined Block Write Protection |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| ST25W16B3 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:I2C Serial EEPROM |
| ST25W16B3TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Kbit Serial I2C Bus EEPROM with User-Defined Block Write Protection |
| ST25W16B5TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Kbit Serial I2C Bus EEPROM with User-Defined Block Write Protection |
| ST25W16B6 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:I2C Serial EEPROM |
| ST25W16B6TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Kbit Serial I2C Bus EEPROM with User-Defined Block Write Protection |
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