參數(shù)資料
型號： ST24W02B1TR
廠商： 意法半導(dǎo)體
英文描述： SERIAL 2K (256 x 8) EEPROM
中文描述： 串行2K（256 × 8）的EEPROM
文件頁數(shù)： 13/16頁
文件大小： 145K
代理商： ST24W02B1TR
ORDERING INFORMATION SCHEME
Notes:
3 * Temperature range on special request only.
5 * Temperature range for ST24C02R only.
Parts are shipped with the memory content set at all "1’s" (FFh).
For a list of available options (Operating Voltage, Range, Package, etc...) refer to the current Memory
Shortform catalogue.
For further information on any aspect of this device, please contact the SGS-THOMSON Sales Office
nearest to you.
Operating Voltage
ST24C02
3V to 5.5V
ST24W02 3V to 5.5V
ST25C02
2.5V to 5.5V
ST25W02 2.5V to 5.5V
ST24C02R 1.8V to 5.5V
Range
Standard
Hardware Write Control
Standard
Hardware Write Control
Standard
Package
PSDIP8
0.25mm Frame
SO8 150mil Width
B
M
Temperature Range
1
0 to 70
°
C
5 *
–20 to 85
°
C
6
–40 to 85
°
C
3 *
–40 to 125
°
C
Option
Tape & Reel
Packing
TR
Example: ST24C02 M 1 TR
13/16
ST24/25C02, ST24C02R, ST24/25W02
相關(guān)PDF資料
PDF描述
ST25C02B1TR SERIAL 2K (256 x 8) EEPROM
ST25C02B3TR SERIAL 2K (256 x 8) EEPROM
ST25C02B5TR MOSFET, N, SO-8; Transistor type:MOSFET; Current, Id cont:4A; Resistance, Rds on:6.7R; Voltage, Vgs Rds on measurement:10V; Case style:SO-8 PowerPak; Charge, gate n-channel:36nC; Current, Idm pulse:50A; Depth, external:5.26mm; Length RoHS Compliant: Yes
ST25C02M1TR MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:150V; Continuous Drain Current, Id:4A; On-Resistance, Rds(on):50mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:8-SOIC; Leaded Process Compatible:No
ST25C02M5TR SERIAL 2K (256 x 8) EEPROM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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ST24W02B5TR 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:SERIAL 2K (256 x 8) EEPROM
ST24W02B6 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:I2C Serial EEPROM
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