參數(shù)資料
型號: ST24W02
廠商: 意法半導體
英文描述: SERIAL 2K (256 x 8) EEPROM
中文描述: 串行2K(256 × 8)的EEPROM
文件頁數(shù): 12/16頁
文件大?。?/td> 145K
代理商: ST24W02
S
DEV SEL *
BYTE ADDR
S
DEV SEL
DATA OUT 1
AI00794C
DATA OUT N
S
S
CURRENT
ADDRESS
READ
DEV SEL
DATA OUT
RANDOM
ADDRESS
READ
S
S
DEV SEL *
DATA OUT
SEQUENTIAL
CURRENT
READ
S
DATA OUT N
S
DEV SEL *
BYTE ADDR
SEQUENTIAL
RANDOM
READ
S
DEV SEL *
DATA OUT 1
S
ACK
R/W
NO ACK
ACK
R/W
ACK
ACK
R/W
ACK
ACK
ACK
NO ACK
R/W
NO ACK
ACK
ACK
R/W
ACK
ACK
R/W
ACK
NO ACK
Figure 10. Read Modes Sequence
Note:
* The 7 Most Significant bits of DEV SEL bytes of a Random Read (1st byte and 3rd byte) must be identical.
12/16
ST24/25C02, ST24C02R, ST24/25W02
相關PDF資料
PDF描述
ST24W02B1TR SERIAL 2K (256 x 8) EEPROM
ST25C02B1TR SERIAL 2K (256 x 8) EEPROM
ST25C02B3TR SERIAL 2K (256 x 8) EEPROM
ST25C02B5TR MOSFET, N, SO-8; Transistor type:MOSFET; Current, Id cont:4A; Resistance, Rds on:6.7R; Voltage, Vgs Rds on measurement:10V; Case style:SO-8 PowerPak; Charge, gate n-channel:36nC; Current, Idm pulse:50A; Depth, external:5.26mm; Length RoHS Compliant: Yes
ST25C02M1TR MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:150V; Continuous Drain Current, Id:4A; On-Resistance, Rds(on):50mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:8-SOIC; Leaded Process Compatible:No
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