參數(shù)資料
型號: ST24FC21BB1TR
廠商: 意法半導(dǎo)體
英文描述: 1 Kbit x8 Dual Mode Serial EEPROM for VESA PLUG & PLAY
中文描述: 1千位x8雙模式串行EEPROM的韋莎插頭
文件頁數(shù): 15/22頁
文件大小: 159K
代理商: ST24FC21BB1TR
memory. The master then terminates the transfer
by generating a STOP condition.
Page Write.
The Page Write mode allows up to 8
bytes to be written in a single write cycle, provided
that they are all located in the same ’row’ in the
memory: that is the most significant memory ad-
dress bits are the same. The master sends from
one up to 8 bytes of data, which are each acknow-
ledged by the memory.
After each byte is transfered, the internal byte
address counter (3 least significant bits only) is
incremented. The transfer is terminated by the
master generating a STOP condition. Care must be
taken to avoid address counter ’roll-over’ which
could result in data being overwritten. Note that, for
any write mode, the generation by the master of the
STOP condition starts the internal memory pro-
gram cycle. All inputs are disabled until the comple-
tion of this cycle and the memory will not respond
to any request.
Minimizing System Delays by Polling On ACK
.
During the internal write cycle, the memory discon-
nects itself from the bus in order to copy the data
from the internal latches to the memory cells. The
maximum value of the write time (t
W
) is given in the
AC Characteristics table, since the typical time is
shorter, the time seen by the system may be re-
duced by an ACK polling sequence issued by the
master. The sequence is as follows:
– Initial condition: a Write is in progress (see Fig-
ure 10).
S
S
BYTE WRITE
DEV SEL
BYTE ADDR
DATA IN
S
PAGE WRITE
DEV SEL
BYTE ADDR
DATA IN 1
DATA IN 2
AI01893
S
DATA IN N
ACK
ACK
ACK
R/W
ACK
ACK
ACK
R/W
ACK
ACK
VCLK/WC
VCLK/WC
Figure 11. Write Modes Sequence
15/22
ST24LC21B, ST24LW21, ST24FC21, ST24FC21B, ST24FW21
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