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參數(shù)資料
| 型號： | ST24C08B3TR |
| 廠商： | 意法半導(dǎo)體 |
| 元件分類： | DRAM |
| 英文描述： | 8 Kbit Serial I2C Bus EEPROM with User-Defined Block Write Protection |
| 中文描述： | 8千位串行I2C總線的EEPROM與用戶定義的塊寫保護 |
| 文件頁數(shù)： | 10/16頁 |
| 文件大小： | 125K |
| 代理商： | ST24C08B3TR |
The sequence is as follows:
– Initial condition: a Write is in progress (see Fig-
ure 8).
– Step 1: the Master issues a START condition
followed by a Device Select byte (1st byte of
the new instruction).
– Step 2: if the memory is busy with the internal
write cycle, no ACK will be returned and the
master goes back to Step 1. If the memory
has terminated the internal write cycle, it will
respond with an ACK, indicating that the mem-
ory is ready to receive the second part of the
next instruction (the first byte of this instruc-
tion was already sent during Step 1).
Write Protection.
Data in the upper block of 256
bytes of the memory may be write protected. The
memory is write protected between a boundary
address and the top of memory (address 3FFh)
when the PRE input pin is taken high and when the
Protect Flag (bit b2 in location 3FFh) is set to ’0’.
The boundary address is user defined by writing it
in the Block Address Pointer. The Block Address
Pointer is an 8 bit EEPROM register located at the
address 3FFh. It is composed by 4 MSBs Address
Pointer, which defines the bottom boundary ad-
dress, and 4 LSBs which must be programmed at
’0’. This Address Pointer can therefore address a
DEVICE OPERATION
(cont’d)
boundary in steps of 16 bytes. The sequence to use
the Write Protected feature is:
– write the data to be protected into the top of
the memory, up to, but not including, location
3FFh;
– set the protection by writing the correct bottom
boundary address in the Address pointer (4
MSBs of location 3FFh) with the bit b2 (Protect
flag) set to ’0’.
Note that for a correct fonctionality of the memory,
all the 4 LSBs of the Block Address Pointer must
also be programmed at ’0’. The area will now be
protected when the PRE input pin is taken High.
While the PRE input pin is read at ’0’ by the mem-
ory, the location 3FFh can be used as a normal
EEPROM byte.
Caution:
Special attention must be used when
using the protect mode together with the Multibyte
Write mode (MODE input pin High). If the Multibyte
Write starts at the location right below the first byte
of the Write Protected area, then the instruction will
write over the first 7 bytes of the Write Protected
area. The area protected is therefore smaller than
the content defined in the location 3FFh, by 7 bytes.
This does not apply to the Page Write mode as the
address counter ’roll-over’ and thus cannot go
above the 16 bytes lower boundary of the protected
area.
S
S
BYTE WRITE
DEV SEL
BYTE ADDR
DATA IN
S
MULTIBYTE
AND
PAGE WRITE
DEV SEL
BYTE ADDR
DATA IN 1
DATA IN 2
AI00793
S
DATA IN N
ACK
ACK
ACK
R/W
ACK
ACK
ACK
R/W
ACK
ACK
Figure 9. Write Modes Sequence (ST24/25C08)
10/16
ST24/25C08, ST24/25W08
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ST24C08B5 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:I2C Serial EEPROM |
| ST24C08B5TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Kbit Serial I2C Bus EEPROM with User-Defined Block Write Protection |
| ST24C08B6 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:I2C Serial EEPROM |
| ST24C08B6TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Kbit Serial I2C Bus EEPROM with User-Defined Block Write Protection |
| ST24C08CM1 | 功能描述:電可擦除可編程只讀存儲器 RO 511-M24C08-MN6 SO-8 8K SER 電可擦除可編程只讀存儲器 RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 |
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