參數(shù)資料
型號： ST230S12P1
廠商： VISHAY SEMICONDUCTORS
元件分類： 晶閘管
英文描述： 360 A, 1200 V, SCR, TO-209AB
封裝： HERMETIC SEALED, METAL, TO-93, 3 PIN
文件頁數(shù)： 3/8頁
文件大小： 89K
代理商： ST230S12P1
ST230S Series
3
Bulletin I25163 rev. C 03/03
www.irf.com
dv/dt
Maximum critical rate of rise of
off-state voltage
I
DRM
I
RRM
Max. peak reverse and off-state
leakage current
Blocking
500
V/μs
T
J
= T
J
max. linear to 80% rated V
DRM
Parameter
ST230S
Units Conditions
30
mA
T
J
= T
J
max, rated V
DRM
/V
RRM
applied
T
J
T
stg
R
thJC
Max. operating temperature range
-40 to 125
Max. storage temperature range
-40 to 150
Max. thermal resistance,
junction to case
Max. thermal resistance,
R
thCS
case to heatsink
T
Mounting torque, ± 10%
31
(275)
24.5
(210)
wt
Approximate weight
280
g
Case style
TO - 209AB (TO-93)
See Outline Table
Parameter
ST230S
Units
Conditions
0.10
DC operation
0.04
Mounting surface, smooth, flat and greased
Thermal and Mechanical Specification
P
GM
P
G(AV)
I
GM
+V
GM
Maximum peak gate power
10.0
T
J
= T
J
max, t
p
≤
5ms
T
J
= T
J
max, f = 50Hz, d% = 50
T
J
= T
J
max, t
p
≤
5ms
Maximum average gate power
2.0
Max. peak positive gate current
3.0
A
Maximum peak positive
gate voltage
-V
GM
Maximum peak negative
gate voltage
I
GT
DC gate current required
T
J
= - 40°C
T
J
= 25°C
T
J
= 125°C
T
J
= - 40°C
T
J
= 25°C
T
J
= 125°C
to trigger
mA
V
GT
DC gate voltage required
to trigger
V
I
GD
DC gate current not to trigger
10
mA
Parameter
ST230S
Units Conditions
20
5.0
Triggering
V
GD
DC gate voltage not to trigger
0.25
V
T
J
= T
J
max
TYP.
MAX.
180
-
90
150
40
-
2.9
-
1.8
3.0
1.2
-
Max. gate current/ voltage not to
trigger is the max. value which
will not trigger any unit with rated
V
DRM
anode-to-cathode applied
Max. required gate trigger/ cur-
rent/ voltage are the lowest value
which will trigger all units 12V
anode-to-cathode applied
W
V
T
J
= T
J
max, t
p
≤
5ms
°C
K/W
Nm
(lbf-in)
Non lubricated threads
Lubricated threads
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