參數(shù)資料
型號(hào)： ST230S12P0
廠商： VISHAY SEMICONDUCTORS
元件分類： 晶閘管
英文描述： 360 A, 1200 V, SCR, TO-209AB
封裝： HERMETIC SEALED, METAL, TO-93, 3 PIN
文件頁(yè)數(shù)： 3/8頁(yè)
文件大?。?/td> 89K
代理商： ST230S12P0
ST230S Series
3
Bulletin I25163 rev. C 03/03
www.irf.com
dv/dt
Maximum critical rate of rise of
off-state voltage
I
DRM
I
RRM
Max. peak reverse and off-state
leakage current
Blocking
500
V/μs
T
J
= T
J
max. linear to 80% rated V
DRM
Parameter
ST230S
Units Conditions
30
mA
T
J
= T
J
max, rated V
DRM
/V
RRM
applied
T
J
T
stg
R
thJC
Max. operating temperature range
-40 to 125
Max. storage temperature range
-40 to 150
Max. thermal resistance,
junction to case
Max. thermal resistance,
R
thCS
case to heatsink
T
Mounting torque, ± 10%
31
(275)
24.5
(210)
wt
Approximate weight
280
g
Case style
TO - 209AB (TO-93)
See Outline Table
Parameter
ST230S
Units
Conditions
0.10
DC operation
0.04
Mounting surface, smooth, flat and greased
Thermal and Mechanical Specification
P
GM
P
G(AV)
I
GM
+V
GM
Maximum peak gate power
10.0
T
J
= T
J
max, t
p
≤
5ms
T
J
= T
J
max, f = 50Hz, d% = 50
T
J
= T
J
max, t
p
≤
5ms
Maximum average gate power
2.0
Max. peak positive gate current
3.0
A
Maximum peak positive
gate voltage
-V
GM
Maximum peak negative
gate voltage
I
GT
DC gate current required
T
J
= - 40°C
T
J
= 25°C
T
J
= 125°C
T
J
= - 40°C
T
J
= 25°C
T
J
= 125°C
to trigger
mA
V
GT
DC gate voltage required
to trigger
V
I
GD
DC gate current not to trigger
10
mA
Parameter
ST230S
Units Conditions
20
5.0
Triggering
V
GD
DC gate voltage not to trigger
0.25
V
T
J
= T
J
max
TYP.
MAX.
180
-
90
150
40
-
2.9
-
1.8
3.0
1.2
-
Max. gate current/ voltage not to
trigger is the max. value which
will not trigger any unit with rated
V
DRM
anode-to-cathode applied
Max. required gate trigger/ cur-
rent/ voltage are the lowest value
which will trigger all units 12V
anode-to-cathode applied
W
V
T
J
= T
J
max, t
p
≤
5ms
°C
K/W
Nm
(lbf-in)
Non lubricated threads
Lubricated threads
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
ST230S12P0V 功能描述:SCR PHASE CONT 1200V 230A TO-93 RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> SCR - 單個(gè) 系列:- 其它有關(guān)文件:X00619 View All Specifications 產(chǎn)品目錄繪圖:SCR TO-92 Package 標(biāo)準(zhǔn)包裝:1 系列:- SCR 型:靈敏柵極 電壓 - 斷路:600V 電壓 - 柵極觸發(fā)器 (Vgt)（最大）:800mV 電壓 - 導(dǎo)通狀態(tài) (Vtm)（最大）:1.35V 電流 - 導(dǎo)通狀態(tài) (It (AV))（最大）:500mA 電流 - 導(dǎo)通狀態(tài) (It (RMS))（最大）:800mA 電流 - 柵極觸發(fā)電流 (Igt)（最大）:200µA 電流 - 維持(Ih):5mA 電流 - 斷開狀態(tài)（最大）:1µA 電流 - 非重復(fù)電涌，50、60Hz (Itsm):9A，10A 工作溫度:-40°C ~ 125°C 安裝類型:通孔 封裝/外殼:TO-226-3、TO-92-3（TO-226AA）成形引線 供應(yīng)商設(shè)備封裝:TO-92-3 包裝:剪切帶 (CT) 產(chǎn)品目錄頁(yè)面:1554 (CN2011-ZH PDF) 其它名稱:497-9067-1
ST230S12P0VPBF 制造商:Vishay Semiconductors 功能描述:THYRISTOR, PHASE CONTROL; PHASE CONTROL; 1200 V (MAX.); 5700 A (MAX.) @ 10 MS
ST230S12P1V 功能描述:SCR 230 Amp 1200 Volt 360 Amp IT(RMS) RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube
ST230S12P1VPBF 制造商:Vishay Semiconductors 功能描述:THYRISTOR 230A 1200V TO-93 制造商:Vishay Intertechnologies 功能描述:Thyristor,ST230S12P1V 360A 1200V
ST230S14P0 功能描述:SCR 1400 Volt 230 Amp RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube
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