參數(shù)資料
型號(hào)： ST16CF54 Level B
廠商： 意法半導(dǎo)體
英文描述： 4Mbit (512Kb x8, Uniform Block) Low Voltage Single Supply Flash Memory(4M位低壓?jiǎn)坞娫撮W速存儲(chǔ)器)
中文描述： 的4Mb（512KB的× 8，統(tǒng)一座）低電壓?jiǎn)坞娫撮W存（4分位低壓?jiǎn)坞娫撮W速存儲(chǔ)器）
文件頁(yè)數(shù)： 1/3頁(yè)
文件大?。?/td> 21K
代理商： ST16CF54 LEVEL B
AI02074
19
A0-A18
W
DQ0-DQ7
VCC
M29W040
G
E
VSS
8
Logic Diagram
M29W040
4 Mbit (512Kb x8, Uniform Block)
Low Voltage Single Supply Flash Memory
DATABRIEFING
2.7V to 3.6VSUPPLYVOLTAGEfor
PROGRAM, ERASEand READ OPERATIONS
FASTACCESS TIME: 100ns
BYTE PROGRAMMING TIME: 12
μ
s typical
ERASETIME
– Block: 1.5 sec typical
– Chip: 2.5 sec typical
PROGRAM/ERASECONTROLLER (P/E.C.)
– ProgramByte-by-Byte
– Data Polling and Togglebits Protocolfor
P/E.C. Status
MEMORYERASE in BLOCKS
– 8 Uniform Blocks of 64 KByteseach
– BlockProtection
– Multiblock Erase
ERASE SUSPEND and RESUME MODES
LOW POWER CONSUMPTION
– Read mode: 8mAtypical(at 12MHz)
– Stand-bymode: 20
μ
Atypical
– AutomaticStand-bymode
POWERDOWN SOFTWARE COMMAND
– Power-downmode: 1
μ
Atypical
100,000 PROGRAM/ERASECYCLES per
BLOCK
20 YEARSDATARETENTION
– Defectivity below 1ppm/year
ELECTRONIC SIGNATURE
– ManufacturerCode: 20h
– Device Code: E3h
DESCRIPTION
The M29W040 is a non-volatilememory that may
be erased electrically at the block level, and pro-
grammed Byte-by-Byte.
The interface is directly compatible with most mi-
croprocessors. PLCC32,TSOP32(8x 20mm)and
TSOP32(8 x 14mm)packagesareavailable.Both
normal and reverse pin outs are available for the
TSOP32(8 x 20mm)package.
B29W040/807
Completedata availableon
DATA-on-DISC CD-ROM
or at
www.st.com
1/3
PLCC32 (K)
TSOP32 (N)
8 x 20mm
TSOP32 (NZ)
8 x 14mm
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