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參數(shù)資料
| 型號： | ST13003 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
| 中文描述： | 高壓快速開關(guān)NPN電源晶體管 |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 71K |
| 代理商： | ST13003 |
THERMAL DATA
R
thj-case
R
thj-amb
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max
Max
3.12
89
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unlessotherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CEV
Collector Cut-off
Current (V
BE
= -1.5V)
V
CE
= 700V
V
CE
= 700V
T
j
= 125
o
C
1
5
mA
mA
BV
EBO
Emitter-Base
Breakdown Voltage
(I
C
= 0)
I
E
= 10 mA
9
18
V
V
CEO(sus)
Collector-Emitter
Sustaining Voltage
(I
B
= 0)
V
CE(sat)
Collector-Emitter
Saturation Voltage
I
C
= 10 mA
L = 25mH
400
V
I
C
= 0.5 A
I
C
= 1 A
I
C
= 1.5 A
I
B
= 0.1 A
I
B
= 0.25 A
I
B
= 0.5 A
0.5
1
3
V
V
V
V
BE(sat)
Base-Emitter
Saturation Voltage
I
C
= 0.5 A
I
C
= 1 A
I
C
= 0.5 A
Group A
Group B
I
C
= 1 A
I
B
= 0.1 A
I
B
= 0.25 A
V
CE
= 2 V
1.0
1.2
V
V
h
FE
DC Current Gain
V
CE
= 2 V
8
15
5
20
35
25
t
r
t
s
t
f
RESISTIVE LOAD
Rise Time
Storage Time
Fall Time
I
C
= 1 A
I
B1
= 0.2 A
T
p
= 25
μ
s
I
C
= 1 A
V
BE
= -5 V
V
clamp
= 300 V
V
CC
= 125 V
I
B2
= -0.2 A
1.0
4.0
0.7
μ
s
μ
s
μ
s
t
s
INDUCTIVE LOAD
Storage Time
I
B1
= 0.2 A
L = 50 mH
0.8
μ
s
Pulsed: Pulse duration = 300
μ
s, dutycycle = 1.5 %
Note : Product is pre-selected inDC current gain (GROUP A and GROUP B).STMicroelectronics reserves the right to ship either groups
according to production availability. Please contact your nearest STMicroelectronics sales office for delivery details.
ST13003
2/7
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ST13003_01 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
| ST13003A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 1.5A I(C) | SOT-32 |
| ST13003B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 1.5A I(C) | SOT-32 |
| ST13003D-K | 功能描述:兩極晶體管 - BJT H/V FST SWCH PW TRNS NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| ST13003DN | 功能描述:兩極晶體管 - BJT NPN 700Vces 400Vceo Integrated Diode CFL RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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