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參數(shù)資料
| 型號： | ST110S12P1V |
| 廠商： | International Rectifier |
| 英文描述： | PHASE CONTROL THYRISTORS |
| 中文描述： | 相位控制晶閘管 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大小： | 96K |
| 代理商： | ST110S12P1V |
ST110S Series
2
www.irf.com
Bulletin I25167 rev. C 03/03
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
Type number
Code
V
DRM
/V
RRM
, max. repetitive
peak and off-state voltage
V
400
800
1200
1600
V
RSM
, maximum non-
repetitive peak voltage
V
500
900
1300
1700
I
DRM
/I
RRM
max.
@ T
J
= T
J
max
mA
04
08
12
16
ST110S
20
I
T(AV)
Max. average on-state current
@ Case temperature
110
90
A
°C
180° conduction, half sine wave
I
T(RMS)
Max. RMS on-state current
I
TSM
non-repetitive surge current
175
A
DC @ 85°C case temperature
Max. peak, one-cycle
2700
t = 10ms
No voltage
2830
t = 8.3ms
reapplied
2270
t = 10ms
100% V
RRM
reapplied
2380
t = 8.3ms
Sinusoidal half wave,
I
2
t
Maximum I
2
t for fusing
36.4
t = 10ms
No voltage
Initial T
J
= T
J
max.
33.2
t = 8.3ms
reapplied
25.8
t = 10ms
100% V
RRM
reapplied
23.5
t = 8.3ms
I
2
√
t
Maximum I
2
√
t for fusing
364
KA
2
√
s
t = 0.1 to 10ms, no voltage reapplied
V
T(TO)1
Low level value of threshold
voltage
V
T(TO)
2
High level value of threshold
voltage
r
t1
Low level value of on-state
slope resistance
r
t2
High level value of on-state
slope resistance
V
TM
I
H
I
L
Max. on-state voltage
1.52
V
I
pk
= 350A, T
J
= T
J
max, t
p
= 10ms sine pulse
Maximum holding current
600
Typical latching current
1000
0.90
(16.7% x
π
x I
T(AV)
< I <
π
x I
T(AV)
), T
J
= T
J
max.
1.79
(16.7% x
π
x I
T(AV)
< I <
π
x I
T(AV)
), T
J
= T
J
max.
1.81
(I >
π
x I
T(AV)
),T
J
= T
J
max.
Parameter
ST110S
Units Conditions
0.92
(I >
π
x I
T(AV)
),T
J
= T
J
max.
On-state Conduction
KA
2
s
V
m
mA
T
J
= 25°C, anode supply 12V resistive load
A
di/dt
Max. non-repetitive rate of rise
of turned-on current
Gate drive 20V, 20
, t
r
≤
1μs
T
J
= T
J
max, anode voltage
≤
80% V
DRM
Gate current 1A, di
g
/dt = 1A/μs
V
d
= 0.67% V
DRM
,
T
J
= 25°C
I
TM
= 100A, T
J
= T
J
max, di/dt
= 10A/μs, V
R
= 50V
dv/dt
= 20V/μs, Gate 0V 100
,
t
p
= 500μs
Parameter
ST110S
Units Conditions
t
d
Typical delay time
2.0
Switching
t
q
Typical turn-off time
100
μs
500
A/μs
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| ST110S12P2 | 制造商:n/a 功能描述:Power Semiconductor |
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