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參數(shù)資料
| 型號(hào)： | ST1000C26K3L |
| 廠商： | International Rectifier |
| 英文描述： | PHASE CONTROL THYRISTORS |
| 中文描述： | 相位控制晶閘管 |
| 文件頁數(shù)： | 3/7頁 |
| 文件大?。?/td> | 102K |
| 代理商： | ST1000C26K3L |
ST1000C..K Series
Bulletin I25202 rev. A 01/00
3
www.irf.com
dv/dt
Maximum critical rate of rise of off-state
500
V/μs
T
J
= T
J
max., linear to 80% rated V
DRM
voltage
I
RRM
I
DRM
Maximum peak reverse and off-state
100
μs
T
J
= T
J
max., rated V
DRM
/V
RRM
applied
leakage current
Parameter
ST1000C..K
Units Conditions
Blocking
di/dt
Maximum non repetitive rate of rise
1000
A/μs
Gate drive 20V, 20
, t
r
< 1μs
T
J
= T
J
max., anode voltage < 80% V
DRM
Gate current 1A, di
g
/dt = 1A/μs
V
d
= 0.67% V
DRM
, T
J
= 25
°
C
I
TM
= 550A, T
J
= T
J
max, di/dt = 40A/μs, V
R
= 50V
dv/dt = 20V/μs, Gate 0V 100
, t
p
< 500μs
of turned-on current
t
d
Typical delay time
1.9
μs
t
q
Typical turn-off time
300
A/μs
Parameter
ST1000C..K
Units Conditions
Switching
Parameter
ST1000C..K
Units Conditions
Triggering
P
GM
P
G(AV)
I
GM
+ V
GM
Maximum peak gate power
16
W
T
J
= T
J
max., t
p
< 5ms
T
J
= T
J
max., f = 50Hz, d% = 50
T
J
= T
J
max., t
p
< 5ms
Maximum peak average gate power
3
W
Maximum peak positive gate current
3.0
A
Maximum peak positive gate voltage
20
V
- V
GM
I
GT
Maximum peak negative gate voltage
5.0
V
DC gate current required to trigger
TYP.
MAX.
200
-
T
J
= -40
°
C
100
200
mA
T
J
=
T
J
= 125
°
C
T
J
= -40
°
C
T
J
=
T
J
= 125
°
C
T
J
= T
J
max.
25
°
C
50
-
V
GT
DC gate voltage required to trigger
1.4
-
1.1
3.0
V
25
°
C
0.9
-
I
GD
V
GD
DC gate current not to trigger
10
mA
DC gate voltage not to trigger
0.25
V
Max. required gate trigger / current /
voltage are the lowest value which
will trigger all units 12V anode-to-
cathode applied
Max. gate current / voltage not to
trigger is the max. value which will
not trigger any units with rated V
DRM
anode-to-cathode applied
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