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參數(shù)資料
| 型號： | SSY39V800904IU1 |
| 廠商： | Silicon Storage Technology, Inc. |
| 英文描述： | 2 MBIT / 4 MBIT / 8 MBIT ( X 16 ) MULTI - PURPOSE FLASH |
| 中文描述： | 2兆位/ 4兆位/ 8兆比特（× 16）多-通用閃存 |
| 文件頁數(shù)： | 18/30頁 |
| 文件大?。?/td> | 327K |
| 代理商： | SSY39V800904IU1 |
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18
Data Sheet
2 Mbit / 4 Mbit / 8 Mbit Multi-Purpose Flash
SST39LF200A / SST39LF400A / SST39LF800A
SST39VF200A / SST39VF400A / SST39VF800A
2001 Silicon Storage Technology, Inc.
S71117-04-000
6/01
360
FIGURE 9: WE# C
ONTROLLED
B
LOCK
-E
RASE
T
IMING
D
IAGRAM
FIGURE 10: WE# C
ONTROLLED
S
ECTOR
-E
RASE
T
IMING
D
IAGRAM
360 ILL F17.9
ADDRESS AMS-0
DQ15-0
WE#
SW0
SW1
SW2
SW3
SW4
SW5
5555
2AAA
2AAA
5555
5555
XX55
XX50
XX55
XXAA
XX80
XXAA
BAX
OE#
CE#
SIX-BYTE CODE FOR BLOCK-ERASE
TBE
TWP
Note: This device also supports CE# controlled Block-Erase operation. The WE# and CE# signals are
interchageable as long as minimum timings are met. (See Table 16)
BAX = Block Address
AMS = Most significant address
AMS = A16 for SST39LF/VF200A, A17 for SST39LF/VF400A and A18 for SST39LF/VF800A
X can be VIL or VIH, but no other value.
360 ILL F18.8
ADDRESS AMS-0
DQ15-0
WE#
SW0
SW1
SW2
SW3
SW4
SW5
5555
2AAA
2AAA
5555
5555
XX55
XX30
XX55
XXAA
XX80
XXAA
SAX
OE#
CE#
SIX-BYTE CODE FOR SECTOR-ERASE
TSE
TWP
Note: This device also supports CE# controlled Sector-Erase operation. The WE# and CE# signals are
interchageable as long as minimum timings are met. (See Table 16)
SAX = Sector Address
AMS = Most significant address
AMS = A16 for SST39LF/VF200A, A17 for SST39LF/VF400A and A18 for SST39LF/VF800A
X can be VIL or VIH, but no other value.
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