- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄365746 > SSY39V800454CE3 (Silicon Storage Technology, Inc.) 2 MBIT / 4 MBIT / 8 MBIT ( X 16 ) MULTI - PURPOSE FLASH PDF資料下載
參數(shù)資料
| 型號(hào)： | SSY39V800454CE3 |
| 廠(chǎng)商： | Silicon Storage Technology, Inc. |
| 英文描述： | 2 MBIT / 4 MBIT / 8 MBIT ( X 16 ) MULTI - PURPOSE FLASH |
| 中文描述： | 2兆位/ 4兆位/ 8兆比特（× 16）多-通用閃存 |
| 文件頁(yè)數(shù)： | 12/30頁(yè) |
| 文件大?。?/td> | 327K |
| 代理商： | SSY39V800454CE3 |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)當(dāng)前第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)第20頁(yè)第21頁(yè)第22頁(yè)第23頁(yè)第24頁(yè)第25頁(yè)第26頁(yè)第27頁(yè)第28頁(yè)第29頁(yè)第30頁(yè)
12
Data Sheet
2 Mbit / 4 Mbit / 8 Mbit Multi-Purpose Flash
SST39LF200A / SST39LF400A / SST39LF800A
SST39VF200A / SST39VF400A / SST39VF800A
2001 Silicon Storage Technology, Inc.
S71117-04-000
6/01
360
TABLE 10: DC O
PERATING
C
HARACTERISTICS
V
DD
= 3.0-3.6V
FOR
SST39LF200A/400A/800A
AND
2.7-3.6V
FOR
SST39VF200A/400A/800A
Symbol
I
DD
Parameter
Power Supply Current
Limits
Max
Test Conditions
Address input = V
IL
/V
IH
, at f=1/T
RC
Min.,
V
DD
=V
DD
Max.
CE#=OE#=V
IL
,WE#=V
IH
, all I/Os open
CE#=WE#=V
IL
, OE#=V
IH
CE#=V
IHC
, V
DD
= V
DD
Max.
V
IN
=GND to V
DD
, V
DD
= V
DD
Max.
V
OUT
=GND to V
DD
, V
DD
= V
DD
Max.
V
DD
= V
DD
Min.
V
DD
= V
DD
Max.
V
DD
= V
DD
Max.
I
OL
= 100 μA, V
DD
= V
DD
Min.
I
OH
= -100 μA, V
DD
= V
DD
Min.
Min
Units
Read
Program and Erase
Standby V
DD
Current
Input Leakage Current
Output Leakage Current
Input Low Voltage
Input High Voltage
Input High Voltage (CMOS)
Output Low Voltage
Output High Voltage
30
30
20
1
10
0.8
mA
mA
μA
μA
μA
I
SB
I
LI
I
LO
V
IL
V
IH
V
IHC
V
OL
V
OH
0.7V
DD
V
DD
-0.3
V
V
V
V
0.2
V
DD
-0.2
T10.5 360
TABLE 11: R
ECOMMENDED
S
YSTEM
P
OWER
-
UP
T
IMINGS
Symbol
T
PU-READ1
T
PU-WRITE1
Parameter
Power-up to Read Operation
Power-up to Program/Erase Operation
Minimum
100
100
Units
μs
μs
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
T11.0 360
TABLE 12: C
APACITANCE
(Ta = 25
°
C, f=1 Mhz, other pins open)
Parameter
C
I/O1
C
IN1
Description
I/O Pin Capacitance
Input Capacitance
Test Condition
V
I/O
= 0V
V
IN
= 0V
Maximum
12 pF
6 pF
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
T12.0 360
TABLE 13: R
ELIABILITY
C
HARACTERISTICS
Symbol
N
END1
T
DR1
I
LTH1
Parameter
Endurance
Data Retention
Latch Up
Minimum Specification
10,000
100
100 + I
DD
Units
Cycles
Years
mA
Test Method
JEDEC Standard A117
JEDEC Standard A103
JEDEC Standard 78
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
T13.1 360
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SSY39V800454CEK | 2 MBIT / 4 MBIT / 8 MBIT ( X 16 ) MULTI - PURPOSE FLASH |
| SSY39V800454CU1 | 2 MBIT / 4 MBIT / 8 MBIT ( X 16 ) MULTI - PURPOSE FLASH |
| SSY39V800454IU2 | 2 MBIT / 4 MBIT / 8 MBIT ( X 16 ) MULTI - PURPOSE FLASH |
| SSY39V800454IU3 | 2 MBIT / 4 MBIT / 8 MBIT ( X 16 ) MULTI - PURPOSE FLASH |
| SSY39V800454IUK | 2 MBIT / 4 MBIT / 8 MBIT ( X 16 ) MULTI - PURPOSE FLASH |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SSY5829P | 制造商:SECOS 制造商全稱(chēng):SeCoS Halbleitertechnologie GmbH 功能描述:P-Channel Enhancement MOSFET With Schottky Diode |
| SSY-CLD-J1 | 制造商:DOMINANT 制造商全稱(chēng):DOMINANT Semiconductors 功能描述:SpiceLED AlInGaP S-Spice |
| SSY-CLD-J2 | 制造商:DOMINANT 制造商全稱(chēng):DOMINANT Semiconductors 功能描述:SpiceLED AlInGaP S-Spice |
| SSY-CLD-JK2-I2 | 制造商:DOMINANT 制造商全稱(chēng):DOMINANT Semiconductors 功能描述:SpiceLED AlInGaP S-Spice |
| SSY-CLD-K1 | 制造商:DOMINANT 制造商全稱(chēng):DOMINANT Semiconductors 功能描述:SpiceLED AlInGaP S-Spice |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。