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參數(shù)資料
| 型號(hào)： | SSY39V400904IU1 |
| 廠商： | Silicon Storage Technology, Inc. |
| 英文描述： | 2 MBIT / 4 MBIT / 8 MBIT ( X 16 ) MULTI - PURPOSE FLASH |
| 中文描述： | 2兆位/ 4兆位/ 8兆比特（× 16）多-通用閃存 |
| 文件頁(yè)數(shù)： | 13/30頁(yè) |
| 文件大?。?/td> | 327K |
| 代理商： | SSY39V400904IU1 |
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Data Sheet
2 Mbit / 4 Mbit / 8 Mbit Multi-Purpose Flash
SST39LF200A / SST39LF400A / SST39LF800A
SST39VF200A / SST39VF400A / SST39VF800A
13
2001 Silicon Storage Technology, Inc.
S71117-04-000
6/01
360
AC CHARACTERISTICS
TABLE 14: R
EAD
C
YCLE
T
IMING
P
ARAMETERS
V
DD
= 3.0-3.6V
Symbol
T
RC
T
CE
T
AA
T
OE
T
CLZ1
T
OLZ1
T
CHZ1
T
OHZ1
T
OH1
Parameter
Read Cycle Time
Chip Enable Access Time
Address Access Time
Output Enable Access Time
CE# Low to Active Output
OE# Low to Active Output
CE# High to High-Z Output
OE# High to High-Z Output
Output Hold from Address Change
SST39LF200A/400A-45
Min
45
SST39LF200A/400A/800A-55
Min
55
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
Max
Max
45
45
30
55
55
30
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
0
0
0
0
15
15
15
15
0
0
T14.7 360
TABLE 15: R
EAD
C
YCLE
T
IMING
P
ARAMETERS
V
DD
= 2.7-3.6V
Symbol
T
RC
T
CE
T
AA
T
OE
T
CLZ1
T
OLZ1
T
CHZ1
T
OHZ1
T
OH1
Parameter
Read Cycle Time
Chip Enable Access Time
Address Access Time
Output Enable Access Time
CE# Low to Active Output
OE# Low to Active Output
CE# High to High-Z Output
OE# High to High-Z Output
Output Hold from Address Change
Min
70
SST39VF200A/400A/800A-90
Min
90
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
Max
Max
70
70
35
90
90
45
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
0
0
0
0
20
20
30
30
0
0
T15.6 360
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