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參數(shù)資料
| 型號： | SSW5N60A |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 4.5A I(D) | TO-263AB |
| 中文描述： | 晶體管| MOSFET的| N溝道| 600V的五（巴西）直| 4.5AI（四）|對263AB |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 231K |
| 代理商： | SSW5N60A |
SSW/I5N60A
BV
DSS
= 600 V
R
DS(on)
= 2.2
Ω
I
D
= 4.5 A
600
4.5
2.8
18
±
30
331
4.5
11
3.0
110
0.88
- 55 to +150
300
1.14
40
62.5
--
--
--
!
Avalanche Rugged Technology
!
Rugged Gate Oxide Technology
!
Lower Input Capacitance
!
Improved Gate Charge
!
Extended Safe Operating Area
!
Lower Leakage Current : 25
μ
A (Max.) @ V
DS
= 600V
!
Lower R
DS(ON)
: 1.81
Ω
(Typ.)
Advanced Power MOSFET
Thermal Resistance
Junction-to-Case
Case-to-Sink *
Junction-to-Ambient
R
θ
JC
R
θ
JA
R
θ
JA
℃
/W
Characteristic
Max.
Units
Symbol
Typ.
FEATURES
Absolute Maximum Ratings
Drain-to-Source Voltage
Continuous Drain Current (T
C
=25
℃
)
Continuous Drain Current (T
C
=100
℃
)
Drain Current-Pulsed
①
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
②
Avalanche Current
①
Repetitive Avalanche Energy
①
Peak Diode Recovery dv/dt
Total Power Dissipation (T
C
=25
℃
)
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from case for 5-seconds
③
Characteristic
Value
Units
V
Symbol
V
DSS
I
DM
V
GS
E
AS
I
AR
E
AR
dv/dt
I
D
P
D
T
J
, T
STG
T
L
A
V
mJ
A
mJ
V/ns
W
W/
℃
A
℃
D
2
-PAK
1. Gate 2. Drain 3. Source
1
3
2
1
2
3
I
2
-PAK
Rev. A
*
When mounted on the minimum pad size recommended (PCB Mount).
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