參數(shù)資料
型號: SSTJ211
廠商: CALOGIC LLC
元件分類: 小信號晶體管
英文描述: N-Channel JFET
中文描述: UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET
封裝: PLASTIC PACKAGE-3
文件頁數(shù): 2/2頁
文件大小: 22K
代理商: SSTJ211
J210 – J212 /SSTJ210 – SSTJ212
C ORPORATION
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25
o
C unless otherwise noted)
Parameter/Test Condition
Symbol
Limit
Unit
Gate-Drain Voltage
Gate-Source Voltage
Gate Current
Power Dissipation
Power Derating
Operating Junction Temperature
Storage Temperature
Lead Temperature (1/16" from case for 10 seconds)
V
GD
V
GS
I
G
P
D
-25
-25
10
360
3.27
V
V
mA
mW
mW/
o
C
C
o
C
o
C
T
J
T
stg
T
L
-55 to 135
-55 to 150
300
ELECTRICAL CHARACTERISTICS
(T
A
= 25
o
C unless otherwise noted)
SYMBOL
CHARACTERISTCS
TYP
1
210
211
212
UNIT
TEST CONDITIONS
MIN
MAX
MIN
MAX
MIN
MAX
STATIC
V
(BR)GSS
Gate-Source Breakdown Voltage
-35
-25
-25
-25
V
I
G
= -1
μ
A, V
DS
= 0V
V
GS(OFF
)
Gate-Source Cut off Voltage
-1
-3
-2.5
-4.5
-4
-6
V
DS
= 15V, I
D
= 1nA
I
DSS
Saturation Drain Current
2
2
15
7
20
15
40
mA
V
DS
= 15V, V
GS
= 0V
I
GSS
Gate Reverse Current
-1
-100
-100
-100
pA
V
GS
= -15V, V
DS
= 0V
-0.5
nA
T
A
= 125
o
C
I
G
Gate Operating Current
-1
pA
V
DG
= 10V, I
D
= 1mA
I
D(OFF)
Drain Cutoff Current
1
pA
V
DS
= 10V, V
GS
= -8V
V
GS(F)
Gate-Source Forward Voltage
0.7
V
I
G
= 1mA, V
DS
= 0V
DYNAMIC
g
fs
Common-Source Forward
Transconductance
4
12
6
12
7
12
mS
V
DS
= 15V, V
GS
= 0V
f = 1kHz
g
os
Common-Source Output
Conductance
150
200
200
μ
S
C
iss
Common-Source Input Capacitance
4
pF
V
DS
= 15V, V
GS
= 0V
f = 1MHz
C
rss
Common-Source Reverse
Transfer Capacitance
1.5
e
n
Equivalent Input Noise Voltage
5
nV/ Hz
V
DS
= 15V, V
GS
= 0V
f = 1kHz
NOTES: 1. For design aid only, not subject to production testing.
2. Pulse test; PW = 300
μ
s, duty cycle
3%.
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