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參數(shù)資料
| 型號： | SST85LD1008M-60-PC-LBTE |
| 元件分類： | 存儲控制器/管理單元 |
| 英文描述： | IDE COMPATIBLE, FLASH MEMORY DRIVE CONTROLLER, PBGA91 |
| 封裝： | 12 X 24 MM, ROHS COMPLIANT, MO-210, LBGA-91 |
| 文件頁數(shù)： | 9/11頁 |
| 文件大?。?/td> | 211K |
| 代理商： | SST85LD1008M-60-PC-LBTE |
7
Fact Sheet
1 GByte / 2 GByte / 4 GByte / 8 GByte NANDrive
SST85LD1001K / SST85LD1002L / SST85LD1004M /SST85LD1008M
2008 Silicon Storage Technology, Inc.
S71319(01)-04-000
11/08
4.0 CAPACITY SPECIFICATION
Table 4-1 shows the default capacity and specific settings for heads, sectors, and cylinders. At production time, the man-
ufacturer can change the default settings in the drive ID table by changing the Cylinders-Heads Sectors configuration. If
the total number of bytes configured is less than the default amount, the remaining space could be used as spare blocks
to increase the flash drive endurance. It should also be noted that if the initialized total flash drive capacity exceeds the
total bytes shown in Table 4-1, the flash drive endurance will be reduced.
TABLE
4-1: Default NANDrive Settings
Capacity
Total Bytes
Cylinders
Heads
Sectors
Max LBA
1 GByte
1,024,966,656
1986
16
63
2,001,888
2 GByte
2,048,385,024
3969
16
63
4,000,752
4 GByte
4,096,253,952
7937
16
63
8,000,496
8 GByte
8,001,552,384
15504
16
63
15,628,032
T4-1.6 1319(01)
TABLE
4-2: Sustained Performance
Product
Write Performance
Read Performance
SST85LD1001K-60-PC-LBTE
Up to 2 MByte/sec
Up to 13 MByte/sec
SST85LD1002L-60-PC-LBTE
Up to 4 MByte/sec
Up to 23 MByte/sec
SST85LD1004M-60-PC-LBTE
Up to 8 MByte/sec
Up to 30 MByte/sec
SST85LD1008M-60-PC-LBTE
Up to 8 MByte/sec
Up to 30 MByte/sec
T4-2.1319(01)
TABLE
4-3: Supported ATA Modes
Products
PIO
MWDMA
UltraDMA
SST85LD1001K-60-PC-LBTE
SST85LD1002L-60-PC-LBTE
SST85LD1004M-60-PC-LBTE
SST85LD1008M-60-PC-LBTE
Up to Mode-6
Up to Mode-4
T4-3.1319(01)
TABLE
4-4: Advanced NAND Management Technology Write Cycles
Products
Write Cycles
per Group
No. of Groups
per Product
Wear-leveling
Group Size
Cluster Size1
1. Optimized host cluster size setting.
SST85LD1001K-60-PC-LBTE
10M
4
256 MBytes
2 KByte
SST85LD1002L-60-PC-LBTE
10M
4
512 MBytes
4 KByte
SST85LD1004M-60-PC-LBTE
10M
4
1 GByte
8 KByte
SST85LD1008M-60-PC-LBTE
10M
4
2 GByte
16 KByte
T4-4.1319(01)
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| SST85LD1008M-60-PC-LCTE | 功能描述:閃存 8G NAND 60ns 3.3V Industrial RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| SST85LP1004A-M-C-LBTE | 功能描述:閃存 4GB NANDrive 3.3V RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| SST85LP1016B-M-C-FTE | 功能描述:閃存 16G NAND 3.3V Commercial RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| SST88VP1107 | 制造商:SST 制造商全稱:Silicon Storage Technology, Inc 功能描述:All-in-OneMemory |
| SST88VP1107-80-5C-LBSE | 功能描述:組合存儲器 NOR/NAND/PSRAM 80MHz 2.7V Commercial RoHS:否 制造商:Microchip Technology 組織:512 K x 16 電源電壓-最大: 電源電壓-最小: 最大工作溫度:+ 85 C 最小工作溫度:- 20 C 封裝 / 箱體:LFBGA-48 封裝:Tray |
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