參數(shù)資料
型號(hào): SST5911
廠商: CALOGIC LLC
英文描述: N-Channel JFET Monolithic Dual
中文描述: N溝道場(chǎng)效應(yīng)單片雙
文件頁(yè)數(shù): 1/2頁(yè)
文件大?。?/td> 27K
代理商: SST5911
N-Channel JFET
Monoithc Dual
SST5911 /SST5912
FEATURES
High Gain . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . g
fs
> 6 mS
Low Leakage . . . . . . . . . . . . . . . . . . . . . . I
G
< 1pA typical
Low Noise
Surface Mount Package
APPLICATIONS
Differential Wideband Amplifier
VHF/UHF Amplifiers
Test and Measurement
DESCRIPTION
The SST5912 is a High Speed N-Channel Monolithic JFET
pair encapsulated in a surface mount plastic SO-8 package.
The device is designed for high gain (typically > 6000
μ
mhos),
low leakage ( < 1pA typically) and low noise, The SST5912 is
an excellent choice for differential wideband amplifiers,
VHF/UHF amplifiers and test and measurement.
ORDERING INFORMATION
Part
SST5912 Plastic SO-8 Package
NOTE: For Sorted Chips in Carriers, See 2N5911 Series
Package
Temperature Range
-55
o
C to +150
o
C
PIN CONFIGURATION
C ORPORATION
SO-8
TOP VIEW
(1) S1
(2) D1
(3) G1
(4) N/C
N/C (8)
G2 (7)
D2 (6)
S2 (5)
CJ1
PRODUCT MARKING
SST5912
SST5912
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25
o
C unless otherwise noted)
Parameter/Test Condition
Symbol
Limit
Unit
Gate-Drain Voltage
Gate-Source Voltage
Forward Gate Current
Power Dissipation
V
GD
V
GS
I
G
P
D
-25
-25
50
300
500
2.4
4
V
V
mA
mW
mW
mW/
o
C
mW/
o
C
C
o
C
o
C
(per side)
(total)
(per side)
(total)
Power Derating
Operating Junction Temperature
Storage Temperature
Lead Temperature (1/16" from case for 10 seconds)
T
J
T
stg
T
L
-55 to 150
-65 to 150
300
相關(guān)PDF資料
PDF描述
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SST5911_SOIC 制造商:MICROSS 制造商全稱:MICROSS 功能描述:MONOLITHIC DUAL N-CHANNEL JFET
SST5912 制造商:CALOGIC 制造商全稱:CALOGIC 功能描述:N-Channel JFET Monolithic Dual
SST5912_SOIC 制造商:MICROSS 制造商全稱:MICROSS 功能描述:MONOLITHIC DUAL N-CHANNEL JFET
SST5912C_SOIC 制造商:MICROSS 制造商全稱:MICROSS 功能描述:MONOLITHIC DUAL N-CHANNEL JFET
SST59U 制造商:Thomas & Betts 功能描述:TOOL SECURITY SHIELD 制造商:Belden Inc 功能描述: