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參數(shù)資料
| 型號： | SST58SM192-70-C-FSI |
| 廠商： | SILICON STORAGE TECHNOLOGY INC |
| 元件分類： | 存儲控制器/管理單元 |
| 英文描述： | ATA-Disk Module |
| 中文描述： | FLASH MEMORY DRIVE CONTROLLER, XMA |
| 文件頁數(shù)： | 10/40頁 |
| 文件大?。?/td> | 377K |
| 代理商： | SST58SM192-70-C-FSI |
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Advance Information
ATA-Disk Module
SST58SM008 / 016 / 024 / 032 / 048 / 064 / 096 / 128 / 192
SST58LM008 / 016 / 024 / 032 / 048 / 064 / 096 / 128 / 192
2001 Silicon Storage Technology, Inc.
S71193-01-000
9/01
519
2.3 Electrical Specification
The following tables define all D.C. Characteristics for the SST ATA-Disk Module product family.
2.3.1 Absolute Maximum Conditions
Unless otherwise stated, conditions are for Commercial Temperature:
Non-operating (storage) temperature range: -50°C to +100°C
V
DD
= 4.5-5.5V
V
DD
= 3.135-3.465V
Ta = 0°C to +70°C
ADM products shall operate correctly in both voltage ranges as shown in the tables above. To comply with this
specification, current requirements must not exceed the maximum limit.
2.3.2 Input Leakage Current
In the table below, x refers to the characteristics described in Section 2.3.2. For example, I1U indicates a pull up
resistor with a type 1 input characteristic.
A
BSOLUTE
M
AXIMUM
C
ONDITIONS
Parameter
Input Power
Voltage on any pin except V
DD
with respect to GND
Symbol
V
DD
V
Conditions
-0.3V min to 6.5V max
-0.5V min to V
DD
+ 0.5V max
I
NPUT
P
OWER
Voltage
3.135-3.465V
4.5-5.5V
Maximum Average RMS
Active Current
75 mA
100 mA
Maximum Average RMS
Sleep Current
200 μA
300 μA
Measurement Method
3.3V at 25
°C
1
5.0V at 25
°C
1
1. Current measurement is accomplished by connecting an amp meter (set to the 2 amp scale range) in series with the V
DD
supply to
the ADM. Current measurements are to be taken while looping on a data transfer command with a sector count of 128. Current con-
sumption values for both Read and Write commands are not to exceed the Maximum Average RMS Current specified in the above
table.
Type
IxZ
IxU
IxD
Parameter
Input Leakage Current
Pull Up Resistor
Pull Down Resistor
Symbol
IL
RPU1
RPD1
Conditions
V
IH
= V
DD
/ V
IL
= Gnd
V
DD
= 5.0V
V
DD
= 5.0V
MIN
-1
50k
50k
TYP
MAX
1
500k
500k
Units
μA
Ohm
Ohm
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SST58LM192-70-C-FSI | ATA-Disk Module |
| SST58SM032-70-C-FSI | ATA-Disk Module |
| SST58LM128 | MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-20V; Continuous Drain Current, Id:-6.2A; On-Resistance, Rds(on):40mohm; Rds(on) Test Voltage, Vgs:-4.5V; Package/Case:SO-8; Leaded Process Compatible:Yes |
| SST58LM128-70-C-FSJ | MOSFET, P SO-8MOSFET, P SO-8; Transistor type:MOSFET; Transistor polarity:P; Voltage, Vds max:30V; Case style:SO-8; Current, Id cont:4.1A; Current, Idm pulse:-30A; Power, Pd:1.3W; Resistance, Rds on:0.042R; SMD:1; Charge, gate p |
| SST58LM192 | ATA-Disk Module |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SST58SM192-70-C-FSJ | 制造商:SST 制造商全稱:Silicon Storage Technology, Inc 功能描述:ATA-Disk Module |
| SST58SMXXX | 制造商:SST 制造商全稱:Silicon Storage Technology, Inc 功能描述:ATA-Disk Module |
| SST5910 | 制造商:Thomas & Betts 功能描述:SECURITY SHIELD TOOL |
| SST5911 | 制造商:CALOGIC 制造商全稱:CALOGIC 功能描述:N-Channel JFET Monolithic Dual |
| SST5911_SOIC | 制造商:MICROSS 制造商全稱:MICROSS 功能描述:MONOLITHIC DUAL N-CHANNEL JFET |
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