
Data Sheet
CompactFlash Card
SST48CF008 / 016 / 024 / 032 / 048 / 064 / 096 / 128 / 192 / 256
13
2001 Silicon Storage Technology, Inc.
S71125-03-000
9/01
375
2.3 Electrical Specification
The following table defines all D.C. Characteristics for the SST CompactFlash card product family.
Unless otherwise stated, conditions are:
Non operating (storage) temperature range -25°C to +85°C
V
DD
= 4.5-5.5V
V
DD
= 3.135-3.465V
Ta = 0°C to +70°C
CompactFlash products shall operate correctly in both voltage ranges as shown in the table above. To comply with
this specification, current requirements must not exceed the maximum limit.
2.3.1 Input Leakage Current
In the table below, x refers to the characteristics described in Section 2.3.2. For example, I1U indicates a pull up
resistor with a type 1 input characteristic.
A
BSOLUTE
M
AXIMUM
C
ONDITIONS
Parameter
Input Power
Voltage on any pin except V
DD
with respect to GND
Symbol
V
DD
V
Conditions
-0.3V min. to 6.5V Max
-0.5V min. to V
DD
+ 0.5V Max
I
NPUT
P
OWER
Voltage
3.135-3.465V
4.5-5.5V
Maximum Average RMS
Active Current
75 mA
100 mA
Maximum Average RMS
Sleep Current
200 μA
300 μA
Measurement Method
3.3V at 25°C
1
5.0V at 25°C
1
1. Current measurement is accomplished by connecting an amp meter (set to the 2 amp scale range) in series with the
V
DD
supply to
the CompactFlash card. Current measurements are to be taken while looping on a data transfer command with a sector count of 128.
Current consumption values for both Read and Write commands are not to exceed the Maximum Average RMS Current specified in
this table
Type
IxZ
IxU
IxD
Parameter
Input Leakage Current
Pull Up Resistor
Pull Down Resistor
Symbol
IL
RPU1
RPD1
Conditions
V
IH
= V
DD
/
V
IL
= GND
V
DD
= 5.0V
V
DD
= 5.0V
Min
-1
50k
50k
Typ
Max
1
500k
500k
Units
μA
Ohm
Ohm