
5
2000 Silicon Storage Technology, Inc.
512 Kbit / 1 Mbit / 2 Mbit Serial Flash
SST45VF512 / SST45VF010 / SST45VF020
Advance Information
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
S71178
514-1 10/00
Absolute Maximum Stress Ratings
(Applied conditions greater than those listed under
“
Absolute maximum Stress
Ratings
”
may cause permanent damage to the device. This is a stress rating only and functional operation of the device
at these conditions or conditions greater than those defined in the operational sections of this data sheet is not implied.
Exposure to absolute maximum stress rating conditions may affect device reliability.)
Temperature Under Bias ................................................................................................................. -55
°
C to +125
°
C
Storage Temperature ...................................................................................................................... -65
°
C to +150
°
C
D. C. Voltage on Any Pin to Ground Potential ............................................................................ -0.5V to V
DD
+ 0.5V
Transient Voltage (<20 ns) on Any Pin to Ground Potential........................................................ -1.0V to V
DD
+ 1.0V
Package Power Dissipation Capability (Ta = 25
°
C) ...........................................................................................1.0W
Surface Mount Lead Soldering Temperature (3 Seconds)............................................................................... 240
°
C
Output Short Circuit Current
1...................................................................................................................................................................
50 mA
AC C
ONDITIONS
OF
T
EST
Input Rise/Fall Time......... 5 ns
Output Load..................... C
L
= 30 pF
See Figures 2 and 3
T
ABLE
5: DC O
PERATING
C
HARACTERISTICS
V
DD
= 2.7-3.6V
Limits
Max
Symbol
Parameter
Power Supply Current
Read
Program and Erase
Standby Current
Input Leakage Current
Output Leakage Current
Input Low Current
(2)
Input Low Voltage
Input High Voltage
Input High Voltage (CMOS) V
DD
-0.3
Output Low Voltage
Output High Voltage
Min
Units
Test Conditions
f = 10 MHz
CE# = V
IL
, V
DD
= V
DD
Max.
CE# = V
IL
, V
DD
= V
DD
Max.
CE# = V
IHC
, V
DD
= V
DD
Max.
V
IN
=GND to V
DD
, V
DD
= V
DD
Max.
V
OUT
=GND to V
DD
, V
DD
= V
DD
Max.
WP#, RESET# = GND
V
DD
= V
DD
Min.
V
DD
= V
DD
Max.
V
DD
= V
DD
Max.
I
OL
= 100 μA, V
DD
= V
DD
Min.
I
OH
= -100 μA, V
DD
= V
DD
Min.
I
DD
20
30
15
1
1
360
0.8
mA
mA
μA
μA
μA
μA
V
V
V
V
V
I
SB
I
LI
I
LO
I
IL
V
IL
V
IH
V
IHC
V
OL
V
OH
0.7 V
DD
0.2
V
DD
-0.2
Note:
1. Outputs shorted for no more than one second. No more than one output shorted at a time.
2. This parameter only applies to WP# and RESET# pins.
514 PGM T5.2
O
PERATING
R
ANGE
Range
Commercial
Ambient Temp
0
°
C to +70
°
C
V
DD
2.7-3.6V