參數(shù)資料
型號(hào)： SST4117
廠商： Vishay Intertechnology,Inc.
英文描述： MOSFET, DUAL PP SO-8MOSFET, DUAL PP SO-8; Transistor type:MOSFET; Transistor polarity:Dual P; Voltage, Vds max:20V; Case style:SO-8; Current, Id cont:3.6A; Current, Idm pulse:40A; Power, Pd:1.1W; Resistance, Rds on:0.06R; SMD:1;
中文描述： N溝道JFET的
文件頁(yè)數(shù)： 4/5頁(yè)
文件大?。?/td> 61K
代理商： SST4117
2N/PN/SST4117A Series
Vishay Siliconix
www.vishay.com
4
Document Number: 70239
S-41231—Rev. G, 28-Jun-04
TYPICAL CHARACTERISTICS (T
A
= 25 C UNLESS OTHERWISE NOTED)
300
240
180
60
0
Transconductance vs. Gate-Source Voltage
Transfer Characteristics
Transconductance vs. Gate-Source Voltage
Transfer Characteristics
Common-Source Input Capacitance
vs. Gate-Source Voltage
Circuit Voltage Gain vs. Drain Current
500
0
4
5
2
1
0
T
A
=
55 C
125 C
100
0
0.4
0.2
0.8
1.0
80
60
20
0
200
160
120
40
0
T
A
= 125 C
55 C
T
A
=
55 C
125 C
V
DS
= 10 V
V
= 10 V
f = 1 kHz
V
DS
= 10 V
V
= 10 V
f = 1 kHz
T
A
=
55 C
125 C
0.1
1
0.01
100
0
V
GS(off)
=
0.7 V
2.5 V
R
L
10 V
I
D
Assume V
DD
= 15 V, V
DS
= 5 V
2.0
0
f = 1 MHz
V
DS
= 0 V
10 V
V
GS
Gate-Source Voltage (V)
I
D
Drain Current (mA)
V
GS
Gate-Source Voltage (V)
V
GS
Gate-Source Voltage (V)
V
GS
Gate-Source Voltage (V)
V
GS
Gate-Source Voltage (V)
V
GS(off)
=
0.7 V
V
GS(off)
=
0.7 V
V
GS(off)
=
2.5 V
V
GS(off)
=
2.5 V
40
80
60
20
40
80
25 C
25 C
0.6
0
0.4
0.2
0.8
1.0
0.6
3
0
4
5
2
1
3
0
16
20
8
4
12
120
400
300
100
200
1.6
1.2
0.4
0.8
A
V
g
fs
R
L
R
L
g
os
1
25 C
25 C
g
f
μ
S
g
f
μ
S
A
V
C
i
I
D
μ
A
I
D
μ
A
相關(guān)PDF資料
PDF描述
SST4118 MOSFET, DUAL PP SO-8MOSFET, DUAL PP SO-8; Transistor type:MOSFET; Transistor polarity:Dual P; Voltage, Vds max:12V; Case style:SO-8; Current, Id cont:4.8A; Current, Idm pulse:-20A; Power, Pd:1.1W; Resistance, Rds on:0.035R; SMD:1;
SST4119 MOSFET, DUAL, NN, SO-8; Transistor type:MOSFET; Current, Id cont:4.5A; Resistance, Rds on:0.035R; Voltage, Vgs Rds on measurement:4.5V; Case style:SO-8 (SOIC-8); Charge, gate n-channel:8.6nC; Current, Idm pulse:40A; Pins, No. of:8; RoHS Compliant: Yes
SST4117 N-Channel JFET General Purpose Amplifier
SST4118 MOSFET; Transistor Polarity:Dual P Channel; Drain Source Voltage, Vds:-20V; Continuous Drain Current, Id:-4.7A; On-Resistance, Rds(on):60mohm; Rds(on) Test Voltage, Vgs:-4.5V; Package/Case:SO-8; Leaded Process Compatible:Yes
SST4119 MOSFET; Transistor Polarity:Dual P Channel; Drain Source Voltage, Vds:-12V; Continuous Drain Current, Id:-6.4A; On-Resistance, Rds(on):35mohm; Rds(on) Test Voltage, Vgs:-4.5V; Package/Case:SO-8; Leaded Process Compatible:Yes RoHS Compliant: Yes
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SST4117_SOT-23 制造商:MICROSS 制造商全稱:MICROSS 功能描述:an Ultra-High Input Impedance N-Channel JFET
SST4117A 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 20UA I(DSS) | SOT-23
SST4117A-LF 制造商:Calogic LLC 功能描述:SST4117 Series 40 V 50 mA N-Channel JFET General Purpose Amplifier - SOT-23
SST4117-E3 功能描述:JFET 70V 30uA RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流（Vgs=0 時(shí)的 Idss）:50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續(xù)電流:50 mA 配置: 安裝風(fēng)格: 封裝 / 箱體:SC-59 封裝:Reel
SST4117-E3 制造商:Vishay Siliconix 功能描述:JFET
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