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參數(shù)資料
| 型號(hào)： | SST39WF800B |
| 廠商： | Silicon Storage Technology, Inc. |
| 元件分類： | FLASH |
| 英文描述： | 64 Mbit (x16) Multi-Purpose Flash Plus |
| 中文描述： | 64兆位（x16）的多功能閃存加 |
| 文件頁數(shù)： | 1/26頁 |
| 文件大?。?/td> | 773K |
| 代理商： | SST39WF800B |
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2007 Silicon Storage Technology, Inc.
S71344-00-000
1
2/07
The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.
MPF is a trademark of Silicon Storage Technology, Inc.
These specifications are subject to change without notice.
Data Sheet
FEATURES:
Organized as 512K x16
Single Voltage Read and Write Operations
– 1.65-1.95V
Superior Reliability
– Endurance: 100,000 Cycles (typical)
– Greater than 100 years Data Retention
Low Power Consumption (typical values at 5 MHz)
– Active Current: 5 mA (typical)
– Standby Current: 5 μA (typical)
Sector-Erase Capability
– Uniform 2 KWord sectors
Block-Erase Capability
– Uniform 32 KWord blocks
Fast Read Access Time
– 70 ns
Latched Address and Data
Fast Erase and Word-Program
– Sector-Erase Time: 36 ms (typical)
– Block-Erase Time: 36 ms (typical)
– Chip-Erase Time: 140 ms (typical)
– Word-Program Time: 28 μs (typical)
Automatic Write Timing
– Internal V
PP
Generation
End-of-Write Detection
– Toggle Bit
– Data# Polling
CMOS I/O Compatibility
JEDEC Standard
– Flash EEPROM Pinouts and command sets
Packages Available
– 48-ball TFBGA (6mm x 8mm)
– 48-ball WFBGA (5mm x 6mm) Micro-Package
– 48-ball XFLGA (5mm x 6mm) Micro-Package
All non-Pb (lead-free) devices are RoHS compliant
PRODUCT DESCRIPTION
The SST39WF800B is a 512K x16 CMOS Multi-Purpose
Flash (MPF) manufactured with SST proprietary, high-per-
formance CMOS SuperFlash technology. The split-gate
cell design and thick-oxide tunneling injector attain better
reliability and manufacturability compared to alternate
approaches. The SST39WF800B writes (Program or
Erase) with a 1.65-1.95V power supply. This device con-
forms to JEDEC standard pin assignments for x16 memo-
ries.
The SST39WF800B features high-performance Word-Pro-
gramming which provides a typical Word-Program time of
28 μsec. It uses Toggle Bit or Data# Polling to detect the
completion of the Program or Erase operation. On-chip
hardware and software data protection schemes protects
against inadvertent writes. Designed, manufactured, and
tested for a wide spectrum of applications, the
SST39WF800B is offered with a guaranteed typical endur-
ance of 100,000 cycles. Data retention is rated at greater
than 100 years.
The SST39WF800B is suited for applications that require
convenient and economical updating of program, configu-
ration, or data memory. It significantly improves perfor-
mance and reliability of all system applications while
lowering power consumption. It inherently uses less energy
during Erase and Program than alternative flash technolo-
gies. When programming a flash device, the total energy
consumed is a function of the applied voltage, current, and
time of application. For any given voltage range, Super-
Flash technology uses less current to program and has a
shorter erase time; therefore, the total energy consumed
during any Erase or Program operation is less than alterna-
tive flash technologies. These devices also improve flexibil-
ity while lowering the cost for program, data, and
configuration storage applications.
SuperFlash technology provides fixed Erase and Program
times independent of the number of Erase/Program cycles
that have occurred. Consequently, the system software or
hardware does not have to be modified or de-rated as is
necessary with alternative flash technologies, whose Erase
and Program times increase with accumulated Erase/Pro-
gram cycles.
To meet surface mount requirements, the SST39WF800B
is offered in a 48-ball TFBGA package and a 48-ball Micro-
Package. See Figure 3 and Figure 2 for pin assignments.
8 Mbit (x16) Multi-Purpose Flash
SST39WF800B
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SST39WF800B-70-4C-B3KE | 64 Mbit (x16) Multi-Purpose Flash Plus |
| SST39WF800B-70-4C-C2QE | 64 Mbit (x16) Multi-Purpose Flash Plus |
| SST39WF800B-70-4C-M2QE | 64 Mbit (x16) Multi-Purpose Flash Plus |
| SST39WF800B-70-4C-MBQE | 64 Mbit (x16) Multi-Purpose Flash Plus |
| SST39WF800B-70-4I-B3KE | 64 Mbit (x16) Multi-Purpose Flash Plus |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SST39WF800B-70-4C-B3KE | 功能描述:閃存 8M (512Kx16) 70ns 1.65-1.95V Comm RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| SST39WF800B-70-4C-C2QE | 功能描述:閃存 8M (512Kx16) 70ns Commercial Temp RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| SST39WF800B-70-4C-EKE | 功能描述:閃存 1.65 to 1.95V 8Mbit Multi-Purpose 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| SST39WF800B-70-4C-MAQE | 功能描述:閃存 8M (512Kx16) 70ns 1.65-1.95V Comm RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| SST39WF800B-70-4C-Y1QE | 功能描述:閃存 8M (512Kx16) 70ns 1.65-1.95V Comm RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
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