參數(shù)資料
型號: SST39WF800B-70-4I-MBQE
廠商: SILICON STORAGE TECHNOLOGY INC
元件分類: PROM
英文描述: 64 Mbit (x16) Multi-Purpose Flash Plus
中文描述: 512K X 16 FLASH 1.8V PROM, 70 ns, PBGA48
封裝: 5 X 6 MM, 0.50 MM PITCH, ROHS COMPLIANT, MO-225, WFBGA-48
文件頁數(shù): 1/26頁
文件大小: 773K
代理商: SST39WF800B-70-4I-MBQE
2007 Silicon Storage Technology, Inc.
S71344-00-000
1
2/07
The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.
MPF is a trademark of Silicon Storage Technology, Inc.
These specifications are subject to change without notice.
Data Sheet
FEATURES:
Organized as 512K x16
Single Voltage Read and Write Operations
– 1.65-1.95V
Superior Reliability
– Endurance: 100,000 Cycles (typical)
– Greater than 100 years Data Retention
Low Power Consumption (typical values at 5 MHz)
– Active Current: 5 mA (typical)
– Standby Current: 5 μA (typical)
Sector-Erase Capability
– Uniform 2 KWord sectors
Block-Erase Capability
– Uniform 32 KWord blocks
Fast Read Access Time
– 70 ns
Latched Address and Data
Fast Erase and Word-Program
– Sector-Erase Time: 36 ms (typical)
– Block-Erase Time: 36 ms (typical)
– Chip-Erase Time: 140 ms (typical)
– Word-Program Time: 28 μs (typical)
Automatic Write Timing
– Internal V
PP
Generation
End-of-Write Detection
– Toggle Bit
– Data# Polling
CMOS I/O Compatibility
JEDEC Standard
– Flash EEPROM Pinouts and command sets
Packages Available
– 48-ball TFBGA (6mm x 8mm)
– 48-ball WFBGA (5mm x 6mm) Micro-Package
– 48-ball XFLGA (5mm x 6mm) Micro-Package
All non-Pb (lead-free) devices are RoHS compliant
PRODUCT DESCRIPTION
The SST39WF800B is a 512K x16 CMOS Multi-Purpose
Flash (MPF) manufactured with SST proprietary, high-per-
formance CMOS SuperFlash technology. The split-gate
cell design and thick-oxide tunneling injector attain better
reliability and manufacturability compared to alternate
approaches. The SST39WF800B writes (Program or
Erase) with a 1.65-1.95V power supply. This device con-
forms to JEDEC standard pin assignments for x16 memo-
ries.
The SST39WF800B features high-performance Word-Pro-
gramming which provides a typical Word-Program time of
28 μsec. It uses Toggle Bit or Data# Polling to detect the
completion of the Program or Erase operation. On-chip
hardware and software data protection schemes protects
against inadvertent writes. Designed, manufactured, and
tested for a wide spectrum of applications, the
SST39WF800B is offered with a guaranteed typical endur-
ance of 100,000 cycles. Data retention is rated at greater
than 100 years.
The SST39WF800B is suited for applications that require
convenient and economical updating of program, configu-
ration, or data memory. It significantly improves perfor-
mance and reliability of all system applications while
lowering power consumption. It inherently uses less energy
during Erase and Program than alternative flash technolo-
gies. When programming a flash device, the total energy
consumed is a function of the applied voltage, current, and
time of application. For any given voltage range, Super-
Flash technology uses less current to program and has a
shorter erase time; therefore, the total energy consumed
during any Erase or Program operation is less than alterna-
tive flash technologies. These devices also improve flexibil-
ity while lowering the cost for program, data, and
configuration storage applications.
SuperFlash technology provides fixed Erase and Program
times independent of the number of Erase/Program cycles
that have occurred. Consequently, the system software or
hardware does not have to be modified or de-rated as is
necessary with alternative flash technologies, whose Erase
and Program times increase with accumulated Erase/Pro-
gram cycles.
To meet surface mount requirements, the SST39WF800B
is offered in a 48-ball TFBGA package and a 48-ball Micro-
Package. See Figure 3 and Figure 2 for pin assignments.
8 Mbit (x16) Multi-Purpose Flash
SST39WF800B
相關(guān)PDF資料
PDF描述
SST4117 MOSFET, DUAL PP SO-8MOSFET, DUAL PP SO-8; Transistor type:MOSFET; Transistor polarity:Dual P; Voltage, Vds max:20V; Case style:SO-8; Current, Id cont:3.6A; Current, Idm pulse:40A; Power, Pd:1.1W; Resistance, Rds on:0.06R; SMD:1;
SST4118 MOSFET, DUAL PP SO-8MOSFET, DUAL PP SO-8; Transistor type:MOSFET; Transistor polarity:Dual P; Voltage, Vds max:12V; Case style:SO-8; Current, Id cont:4.8A; Current, Idm pulse:-20A; Power, Pd:1.1W; Resistance, Rds on:0.035R; SMD:1;
SST4119 MOSFET, DUAL, NN, SO-8; Transistor type:MOSFET; Current, Id cont:4.5A; Resistance, Rds on:0.035R; Voltage, Vgs Rds on measurement:4.5V; Case style:SO-8 (SOIC-8); Charge, gate n-channel:8.6nC; Current, Idm pulse:40A; Pins, No. of:8; RoHS Compliant: Yes
SST4117 N-Channel JFET General Purpose Amplifier
SST4118 MOSFET; Transistor Polarity:Dual P Channel; Drain Source Voltage, Vds:-20V; Continuous Drain Current, Id:-4.7A; On-Resistance, Rds(on):60mohm; Rds(on) Test Voltage, Vgs:-4.5V; Package/Case:SO-8; Leaded Process Compatible:Yes
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SST3A(T/R) 制造商:Bel Fuse 功能描述:FUSE SST SERIES
SST3I-C 功能描述:電纜束帶 Cable Tie 2-Piece 11.0"L (279mm) Inte RoHS:否 制造商:Phoenix Contact 產(chǎn)品:Cable Tie Mounts 類型:Adhesive 顏色:Black 材料:Acrylonitrile Butadiene Styrene (ABS) 長度:19 mm 寬度:19 mm 抗拉強(qiáng)度:
SST3I-C0 功能描述:電纜束帶 Cable Tie, 2-Piece, 11.0"L (279mm), Inte RoHS:否 制造商:Phoenix Contact 產(chǎn)品:Cable Tie Mounts 類型:Adhesive 顏色:Black 材料:Acrylonitrile Butadiene Styrene (ABS) 長度:19 mm 寬度:19 mm 抗拉強(qiáng)度:
SST3I-M 功能描述:電纜束帶 Cable Tie, 2-Piece, 11.0"L (279mm), Inte RoHS:否 制造商:Phoenix Contact 產(chǎn)品:Cable Tie Mounts 類型:Adhesive 顏色:Black 材料:Acrylonitrile Butadiene Styrene (ABS) 長度:19 mm 寬度:19 mm 抗拉強(qiáng)度:
SST3I-M0 功能描述:電纜束帶 Cable Tie, 2-Piece, 11.0"L (279mm), Inte RoHS:否 制造商:Phoenix Contact 產(chǎn)品:Cable Tie Mounts 類型:Adhesive 顏色:Black 材料:Acrylonitrile Butadiene Styrene (ABS) 長度:19 mm 寬度:19 mm 抗拉強(qiáng)度: