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參數(shù)資料
| 型號： | SST39WF400A-90-4C-B3KE |
| 廠商： | SILICON STORAGE TECHNOLOGY INC |
| 元件分類： | PROM |
| 英文描述： | 64 Mbit (x16) Multi-Purpose Flash Plus |
| 中文描述： | 256K X 16 FLASH 1.8V PROM, 90 ns, PBGA48 |
| 封裝： | 6 X 8 MM, 0.80 MM PITCH, MO-210AB-1, TFBGA-48 |
| 文件頁數(shù)： | 8/26頁 |
| 文件大?。?/td> | 374K |
| 代理商： | SST39WF400A-90-4C-B3KE |
8
Data Sheet
4 Mbit Multi-Purpose Flash
SST39WF400A
2004 Silicon Storage Technology, Inc.
S71220-05-000
6/04
TABLE
6: S
YSTEM
I
NTERFACE
I
NFORMATION
FOR
SST39WF400A
Address
1BH
Data
0016H
Data
V
DD
Min (Program/Erase)
DQ
7
-DQ
4
: Volts, DQ
3
-DQ
0
: 100 millivolts
V
DD
Max (Program/Erase)
DQ
7
-DQ
4
: Volts, DQ
3
-DQ
0
: 100 millivolts
V
PP
min (00H = no V
PP
pin)
V
PP
max (00H = no V
PP
pin)
Typical time out for Word-Program 2
N
μs (2
5
= 32 μs)
Typical time out for min size buffer program 2
N
μs (00H = not supported)
Typical time out for individual Sector/Block-Erase 2
N
ms (2
5
= 32 ms)
Typical time out for Chip-Erase 2
N
ms (2
7
= 128 ms)
Maximum time out for Word-Program 2
N
times typical (2
1
x 2
5
= 64 μs)
Maximum time out for buffer program 2
N
times typical
Maximum time out for individual Sector/Block-Erase 2
N
times typical (2
1
x 2
5
= 64 ms)
Maximum time out for Chip-Erase 2
N
times typical (2
1
x 2
7
= 256 ms)
1CH
0020H
1DH
1EH
1FH
20H
21H
22H
23H
24H
25H
26H
0000H
0000H
0005H
0000H
0005H
0007H
0001H
0000H
0001H
0001H
T6.0 1220
TABLE
Address
27H
28H
29H
2AH
2BH
2CH
2DH
2EH
2FH
30H
31H
32H
33H
34H
7: D
EVICE
G
EOMETRY
I
NFORMATION
FOR
SST39WF400A
Data
Data
0013H
Device size = 2
N
Byte (13H = 19; 2
19
= 512 KByte)
0001H
Flash Device Interface description; 0001H = x16-only asynchronous interface
0000H
0000H
Maximum number of byte in multi-byte write = 2
N
(00H = not supported)
0000H
0002H
Number of Erase Sector/Block sizes supported by device
007FH
Sector Information (y + 1 = Number of sectors; z x 256B = sector size)
0000H
y = 127 + 1 = 128 sectors (007FH = 127)
0010H
0000H
z = 16 x 256 Bytes = 4 KByte/sector (0010H = 16)
0007H
Block Information (y + 1 = Number of blocks; z x 256B = block size)
0000H
y = 7 + 1 = 8 blocks (0007H = 7)
0000H
0001H
z = 256 x 256 Bytes = 64 KByte/block (0100H = 256)
T7.0 1220
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| SST39WF400A-90-4C-M1Q | 64 Mbit (x16) Multi-Purpose Flash Plus |
| SST39WF400A-90-4C-M1QE | 64 Mbit (x16) Multi-Purpose Flash Plus |
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| SST39WF400A-90-4C-B3KE-T | 功能描述:閃存 1.65 to 1.95V 4Mbit Multi-Purpose 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| SST39WF400A-90-4C-C1QE | 功能描述:閃存 4M (256Kx16) 90ns 1.65-1.95V Comm RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| SST39WF400A-90-4C-M1Q | 功能描述:閃存 256K X 16 90ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| SST39WF400A-90-4C-M1QE | 功能描述:閃存 256K X 16 90ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| SST39WF400A-90-4I-B3K | 功能描述:閃存 256K X 16 90ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
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