參數(shù)資料
型號: SST39VF800A-70-4I-B3K
廠商: SILICON STORAGE TECHNOLOGY INC
元件分類: PROM
英文描述: 64 Mbit (x16) Multi-Purpose Flash Plus
中文描述: 512K X 16 FLASH 2.7V PROM, 70 ns, PBGA48
封裝: 6 X 8 MM, 0.80 MM PITCH, MO-210AB-1, TFBGA-48
文件頁數(shù): 9/30頁
文件大小: 340K
代理商: SST39VF800A-70-4I-B3K
Data Sheet
2 Mbit / 4 Mbit / 8 Mbit Multi-Purpose Flash
SST39LF200A / SST39LF400A / SST39LF800A
SST39VF200A / SST39VF400A / SST39VF800A
9
2001 Silicon Storage Technology, Inc.
S71117-04-000
6/01
360
TABLE
6: S
YSTEM
I
NTERFACE
I
NFORMATION
FOR
SST39LF200A/400A/800A
AND
SST39VF200A/400A/800A
Address
1BH
Data
0027H
1
0030H
1
0036H
Data
V
DD
Min. (Program/Erase)
DQ
7
-DQ
4
: Volts, DQ
3
-DQ
0
: 100 millivolts
V
DD
Max. (Program/Erase)
DQ
7
-DQ
4
: Volts, DQ
3
-DQ
0
: 100 millivolts
V
PP
min. (00H = no V
PP
pin)
V
PP
max. (00H = no V
PP
pin)
Typical time out for Word-Program 2
N
μs (2
4
= 16 μs)
Typical time out for min. size buffer program 2
N
μs (00H = not supported)
Typical time out for individual Sector/Block-Erase 2
N
ms (2
4
= 16 ms)
Typical time out for Chip-Erase 2
N
ms (2
6
= 64 ms)
Maximum time out for Word-Program 2
N
times typical (2
1
x 2
4
= 32 μs)
Maximum time out for buffer program 2
N
times typical
Maximum time out for individual Sector/Block-Erase 2
N
times typical (2
1
x 2
4
= 32 ms)
Maximum time out for Chip-Erase 2
N
times typical (2
1
x 2
6
= 128 ms)
1CH
1DH
1EH
1FH
20H
21H
22H
23H
24H
25H
26H
0000H
0000H
0004H
0000H
0004H
0006H
0001H
0000H
0001H
0001H
T6.2 360
1. 0030H for SST39LF200A/400A/800A and 0027H for SST39VF200A/400A/800A
TABLE
Address
27H
28H
29H
2AH
2BH
2CH
2DH
2EH
2FH
30H
31H
32H
33H
34H
7: D
EVICE
G
EOMETRY
I
NFORMATION
FOR
SST39LF/VF200A
Data
Data
0012H
Device size = 2
N
Byte (12H = 18; 2
18
= 256 KBytes)
0001H
Flash Device Interface description; 0001H = x16-only asynchronous interface
0000H
0000H
Maximum number of byte in multi-byte write = 2
N
(00H = not supported)
0002H
003FH
0000H
0010H
0000H
0003H
0000H
0000H
0001H
Number of Erase Sector/Block sizes supported by device
Sector Information (y + 1 = Number of sectors; z x 256B = sector size)
y = 63 + 1 = 64 sectors (003FH = 63)
z = 16 x 256 Bytes = 4 KBytes/sector (0010H = 16)
Block Information (y + 1 = Number of blocks; z x 256B = block size)
y = 3 + 1 = 4 blocks (0003H = 3)
z = 256 x 256 Bytes = 64 KBytes/block (0100H = 256)
T7.2 360
相關(guān)PDF資料
PDF描述
SST39VF800A-70-4I-EK 64 Mbit (x16) Multi-Purpose Flash Plus
SST39VF400A-45-4C-B3K 64 Mbit (x16) Multi-Purpose Flash Plus
SST39VF400A-45-4C-EK 64 Mbit (x16) Multi-Purpose Flash Plus
SST39VF400A-45-4E-B3K 64 Mbit (x16) Multi-Purpose Flash Plus
SST39VF400A-45-4E-EK 64 Mbit (x16) Multi-Purpose Flash Plus
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SST39VF800A-70-4I-EK 功能描述:閃存 512K X 16 70ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
SST39VF800A-70-4I-EKE 功能描述:閃存 512K X 16 70ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
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