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參數(shù)資料
| 型號： | SST39VF800A-70-4C-M1QE |
| 廠商： | SILICON STORAGE TECHNOLOGY INC |
| 元件分類： | PROM |
| 英文描述： | 64 Mbit (x16) Multi-Purpose Flash Plus |
| 中文描述： | 512K X 16 FLASH 2.7V PROM, 70 ns, PBGA48 |
| 封裝： | 4 X 6 MM, 0.50 MM PITCH, ROHS COMPLIANT, MO-207C2B-4, WFBGA-48 |
| 文件頁數(shù)： | 1/31頁 |
| 文件大?。?/td> | 735K |
| 代理商： | SST39VF800A-70-4C-M1QE |
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2007 Silicon Storage Technology, Inc.
S71117-09-000
1
2/07
The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.
MPF is a trademark of Silicon Storage Technology, Inc.
These specifications are subject to change without notice.
Data Sheet
FEATURES:
Organized as 128K x16 / 256K x16 / 512K x16
Single Voltage Read and Write Operations
– 3.0-3.6V for SST39LF200A/400A/800A
– 2.7-3.6V for SST39VF200A/400A/800A
Superior Reliability
– Endurance: 100,000 Cycles (typical)
– Greater than 100 years Data Retention
Low Power Consumption
(typical values at 14 MHz)
– Active Current: 9 mA (typical)
– Standby Current: 3 μA (typical)
Sector-Erase Capability
– Uniform 2 KWord sectors
Block-Erase Capability
– Uniform 32 KWord blocks
Fast Read Access Time
– 45 and 55 ns for SST39LF200A
– 55 ns for SST39LF400A/800A
– 70 ns for SST39VF200A/400A/800A
Latched Address and Data
Fast Erase and Word-Program
– Sector-Erase Time: 18 ms (typical)
– Block-Erase Time: 18 ms (typical)
– Chip-Erase Time: 70 ms (typical)
– Word-Program Time: 14 μs (typical)
– Chip Rewrite Time:
2 seconds (typical) for SST39LF/VF200A
4 seconds (typical) for SST39LF/VF400A
8 seconds (typical) for SST39LF/VF800A
Automatic Write Timing
– Internal V
PP
Generation
End-of-Write Detection
– Toggle Bit
– Data# Polling
CMOS I/O Compatibility
JEDEC Standard
– Flash EEPROM Pinouts and command sets
Packages Available
– 48-lead TSOP (12mm x 20mm)
– 48-ball TFBGA (6mm x 8mm)
– 48-bump XFLGA (4mm x 6mm) for 4M and 8M
All non-Pb (lead-free) devices are RoHS compliant
PRODUCT DESCRIPTION
The SST39LF200A/400A/800A and SST39VF200A/400A/
800A devices are 128K x16 / 256K x16 / 512K x16 CMOS
Multi-Purpose Flash (MPF) manufactured with SST propri-
etary, high-performance CMOS SuperFlash technology.
The split-gate cell design and thick oxide tunneling injector
attain better reliability and manufacturability compared with
alternate approaches. The SST39LF200A/400A/800A
write (Program or Erase) with a 3.0-3.6V power supply.
The SST39VF200A/400A/800A write (Program or Erase)
with a 2.7-3.6V power supply. These devices conform to
JEDEC standard pinouts for x16 memories.
Featuring
SST39LF200A/400A/800A and SST39VF200A/400A/
800A devices provide a typical Word-Program time of 14
μsec. The devices use Toggle Bit or Data# Polling to detect
the completion of the Program or Erase operation. To pro-
tect against inadvertent write, they have on-chip hardware
and software data protection schemes. Designed, manu-
factured, and tested for a wide spectrum of applications,
these devices are offered with a guaranteed typical endur-
ance of 100,000 cycles. Data retention is rated at greater
than 100 years.
high-performance
Word-Program,
the
The SST39LF200A/400A/800A and SST39VF200A/400A/
800A devices are suited for applications that require con-
venient and economical updating of program, configura-
tion, or data memory. For all system applications, they
significantly improve performance and reliability, while low-
ering power consumption. They inherently use less energy
during Erase and Program than alternative flash technolo-
gies. When programming a flash device, the total energy
consumed is a function of the applied voltage, current, and
time of application. Since for any given voltage range, the
SuperFlash technology uses less current to program and
has a shorter erase time, the total energy consumed dur-
ing any Erase or Program operation is less than alternative
flash technologies. These devices also improve flexibility
while lowering the cost for program, data, and configura-
tion storage applications.
The SuperFlash technology provides fixed Erase and Pro-
gram times, independent of the number of Erase/Program
cycles that have occurred. Therefore the system software
or hardware does not have to be modified or de-rated as is
necessary with alternative flash technologies, whose
Erase and Program times increase with accumulated
Erase/Program cycles.
2 Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash
SST39LF200A / SST39LF400A / SST39LF800A
SST39VF200A / SST39VF400A / SST39VF800A
SST39LF/VF200A / 400A / 800A3.0 & 2.7V 2Mb / 4Mb / 8Mb (x16) MPF memories
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SST39VF800A-70-4C-M1QE-T | 功能描述:閃存 2.7 to 3.6V 8Mbit Multi-Purpose 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| SST39VF800A-70-4C-MAQE | 功能描述:閃存 2.7V to 3.6V 8Mbit Multi-Prps Fl RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| SST39VF800A-70-4C-MAQE-T | 功能描述:閃存 2.7V to 3.6V 8Mbit Multi-Prps Fl RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| SST39VF800A-70-4C-Y1QE | 功能描述:閃存 8M (512Kx16) 70ns 2.7-3.6V Commercial RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| SST39VF800A-70-4I-B3K | 功能描述:閃存 512K X 16 70ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
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