參數(shù)資料
型號(hào)： SST39VF6401B-70-4I-EK
廠商： SILICON STORAGE TECHNOLOGY INC
元件分類： PROM
英文描述： 64 Mbit (x16) Multi-Purpose Flash Plus
中文描述： 4M X 16 FLASH 2.7V PROM, 70 ns, PDSO48
封裝： 12 X 20 MM, MO-142DD, TSOP1-48
文件頁(yè)數(shù)： 1/30頁(yè)
文件大?。?/td> 369K
代理商： SST39VF6401B-70-4I-EK
Data Sheet
2006 Silicon Storage Technology, Inc.
S71288-02-000
1
7/06
The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.
MPF is a trademark of Silicon Storage Technology, Inc.
These specifications are subject to change without notice.
64 Mbit (x16) Multi-Purpose Flash Plus
SST39VF6401B / SST39VF6402B
FEATURES:
Organized as 4M x16
Single Voltage Read and Write Operations
– 2.7-3.6V
Superior Reliability
– Endurance: 100,000 Cycles (Typical)
– Greater than 100 years Data Retention
Low Power Consumption (typical values at 5 MHz)
– Active Current: 9 mA (typical)
– Standby Current: 3 μA (typical)
– Auto Low Power Mode: 3 μA (typical)
Hardware Block-Protection/WP# Input Pin
– Top Block-Protection (top 32 KWord)
for SST39VF6402B
– Bottom Block-Protection (bottom 32 KWord)
for SST39VF6401B
Sector-Erase Capability
– Uniform 2 KWord sectors
Block-Erase Capability
– Uniform 32 KWord blocks
Chip-Erase Capability
Erase-Suspend/Erase-Resume Capabilities
Hardware Reset Pin (RST#)
Security-ID Feature
– SST: 128 bits; User: 128 bits
Fast Read Access Time:
– 70 ns
– 90 ns
Latched Address and Data
Fast Erase and Word-Program:
– Sector-Erase Time: 18 ms (typical)
– Block-Erase Time: 18 ms (typical)
– Chip-Erase Time: 40 ms (typical)
– Word-Program Time: 7 μs (typical)
Automatic Write Timing
– Internal V
PP
Generation
End-of-Write Detection
– Toggle Bits
– Data# Polling
CMOS I/O Compatibility
JEDEC Standard
– Flash EEPROM Pin Assignments
– Software command sequence compatibility
- Address format is 11 bits, A
10
-A
0
- Block-Erase 6th Bus Write Cycle is 30H
- Sector-Erase 6th Bus Write Cycle is 50H
Packages Available
– 48-lead TSOP (12mm x 20mm)
– 48-ball TFBGA (8mm x 10mm)
All non-Pb (lead-free) devices are RoHS compliant
PRODUCT DESCRIPTION
The SST39VF640xB devices are 4M x16 CMOS Multi-
Purpose Flash Plus (MPF+) manufactured with SST’s pro-
prietary, high-performance CMOS SuperFlash technology.
The split-gate cell design and thick-oxide tunneling injector
attain better reliability and manufacturability compared with
alternate approaches. The SST39VF640xB write (Pro-
gram or Erase) with a 2.7-3.6V power supply. These
devices conform to JEDEC standard pin assignments for
x16 memories.
Featuring
SST39VF640xB devices provide a typical Word-Program
time of 7 μsec. These devices use Toggle Bit or Data# Poll-
ing to indicate the completion of Program operation. To pro-
tect against inadvertent write, they have on-chip hardware
and Software Data Protection schemes. Designed, manu-
factured, and tested for a wide spectrum of applications,
these devices are offered with a guaranteed typical endur-
ance of 100,000 cycles. Data retention is rated at greater
than 100 years.
high
performance
Word-Program,
the
The SST39VF640xB devices are suited for applications that
require convenient and economical updating of program,
configuration, or data memory. For all system applications,
they significantly improve performance and reliability, while
lowering power consumption. They inherently use less
energy during Erase and Program than alternative flash
technologies. The total energy consumed is a function of
the applied voltage, current, and time of application. Since
for any given voltage range, the SuperFlash technology
uses less current to program and has a shorter erase time,
the total energy consumed during any Erase or Program
operation is less than alternative flash technologies. These
devices also improve flexibility while lowering the cost for
program, data, and configuration storage applications.
The SuperFlash technology provides fixed Erase and Pro-
gram times, independent of the number of Erase/Program
cycles that have occurred. Therefore the system software
or hardware does not have to be modified or de-rated as is
necessary with alternative flash technologies, whose Erase
and Program times increase with accumulated Erase/Pro-
gram cycles.
To meet high-density, surface mount requirements, the
SST39VF640xB devices are offered in 48-lead TSOP and
48-ball TFBGA packages. See Figures 1 and 2 for pin
assignments.
SST39VF640xB2.7V 64Mb (x16) MPF+ memories
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SST39VF6401B704IEKE 制造商:Microchip Technology Inc 功能描述:
SST39VF6401B-70-4I-EKE 功能描述:閃存 64M (4Mx16) 70ns Industrial Temp RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
SST39VF6401B-70-4I-EKE-T 功能描述:閃存 2.7 to 3.6V 64Mbit Multi-Purpose 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
SST39VF6401B-70-4I-EKE-T-CUT TAPE 制造商:Microchip 功能描述:SST39VF Series 64 Mb (4 M x 16) 3.6 V Multi-Purpose Flash Plus SMT - TSOP-48
SST39VF6402B-70-4C-B1KE 功能描述:閃存 64M (4Mx16) 70ns Commercial Temp RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
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