參數(shù)資料
型號： SST39VF400A-70-4C-C1QE
廠商： SILICON STORAGE TECHNOLOGY INC
元件分類： PROM
英文描述： 64 Mbit (x16) Multi-Purpose Flash Plus
中文描述： 256K X 16 FLASH 2.7V PROM, 70 ns, PBGA48
封裝： 4 X 6 MM, 0.50 MM PITCH, ROHS COMPLIANT, MO-207CZB-4, XFLGA-48
文件頁數(shù)： 9/31頁
文件大?。?/td> 735K
代理商： SST39VF400A-70-4C-C1QE
Data Sheet
2 Mbit / 4 Mbit / 8 Mbit Multi-Purpose Flash
SST39LF200A / SST39LF400A / SST39LF800A
SST39VF200A / SST39VF400A / SST39VF800A
9
2007 Silicon Storage Technology, Inc.
S71117-09-000
2/07
TABLE
6: System Interface Information for SST39LF200A/400A/800A and SST39VF200A/400A/800A
Address
1BH
Data
0027H
1
0030H
1
0036H
Data
V
DD
Min (Program/Erase)
DQ
7
-DQ
4
: Volts, DQ
3
-DQ
0
: 100 millivolts
V
DD
Max (Program/Erase)
DQ
7
-DQ
4
: Volts, DQ
3
-DQ
0
: 100 millivolts
V
PP
min (00H = no V
PP
pin)
V
PP
max (00H = no V
PP
pin)
Typical time out for Word-Program 2
N
μs (2
4
= 16 μs)
Typical time out for min size buffer program 2
N
μs (00H = not supported)
Typical time out for individual Sector/Block-Erase 2
N
ms (2
4
= 16 ms)
Typical time out for Chip-Erase 2
N
ms (2
6
= 64 ms)
Maximum time out for Word-Program 2
N
times typical (2
1
x 2
4
= 32 μs)
Maximum time out for buffer program 2
N
times typical
Maximum time out for individual Sector/Block-Erase 2
N
times typical (2
1
x 2
4
= 32 ms)
Maximum time out for Chip-Erase 2
N
times typical (2
1
x 2
6
= 128 ms)
1CH
1DH
1EH
1FH
20H
21H
22H
23H
24H
25H
26H
0000H
0000H
0004H
0000H
0004H
0006H
0001H
0000H
0001H
0001H
T6.2 1117
1. 0030H for SST39LF200A/400A/800A and 0027H for SST39VF200A/400A/800A
TABLE
Address
27H
28H
29H
2AH
2BH
2CH
2DH
2EH
2FH
30H
31H
32H
33H
34H
7: Device Geometry Information for SST39LF/VF200A
Data
Data
0012H
Device size = 2
N
Byte (12H = 18; 2
18
= 256 KByte)
0001H
Flash Device Interface description; 0001H = x16-only asynchronous interface
0000H
0000H
Maximum number of bytes in multi-byte write = 2
N
(00H = not supported)
0002H
003FH
0000H
0010H
0000H
0003H
0000H
0000H
0001H
Number of Erase Sector/Block sizes supported by device
Sector Information (y + 1 = Number of sectors; z x 256B = sector size)
y = 63 + 1 = 64 sectors (003FH = 63)
z = 16 x 256 Bytes = 4 KByte/sector (0010H = 16)
Block Information (y + 1 = Number of blocks; z x 256B = block size)
y = 3 + 1 = 4 blocks (0003H = 3)
z = 256 x 256 Bytes = 64 KByte/block (0100H = 256)
T7.2 1117
相關PDF資料
PDF描述
SST39VF400A-70-4C-EKE 64 Mbit (x16) Multi-Purpose Flash Plus
SST39VF400A-70-4C-M1Q 64 Mbit (x16) Multi-Purpose Flash Plus
SST39VF400A-70-4C-M1QE 64 Mbit (x16) Multi-Purpose Flash Plus
SST39VF400A-70-4I-B3KE 64 Mbit (x16) Multi-Purpose Flash Plus
SST39VF400A-70-4I-C1Q 64 Mbit (x16) Multi-Purpose Flash Plus
相關代理商/技術參數(shù)
參數(shù)描述
SST39VF400A-70-4C-EK 功能描述:閃存 256K X 16 70ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel
SST39VF400A704CEKE 制造商:SST 功能描述:New
SST39VF400A-70-4C-EKE 功能描述:閃存 256K X 16 70ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel
SST39VF400A-70-4C-EKE 制造商:Microchip Technology Inc 功能描述:MEMORY FLASH 4M MPF 48TSOP
SST39VF400A-70-4C-EKE_ 制造商:Microchip Technology Inc 功能描述:
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