參數(shù)資料
型號(hào)： SST39VF320-70-4C-EK
廠商： SILICON STORAGE TECHNOLOGY INC
元件分類： PROM
英文描述： 64 Mbit (x16) Multi-Purpose Flash Plus
中文描述： 2M X 16 FLASH 2.7V PROM, 70 ns, PDSO48
封裝： 12 X 20 MM, MO-142DD, TSOP1-48
文件頁(yè)數(shù)： 1/24頁(yè)
文件大?。?/td> 302K
代理商： SST39VF320-70-4C-EK
Preliminary Specifications
2003 Silicon Storage Technology, Inc.
S71143-02-000
1
11/03
The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.
MPF is a trademark of Silicon Storage Technology, Inc.
These specifications are subject to change without notice.
32 Mbit (x16) Multi-Purpose Flash
SST39VF320
FEATURES:
Organized as 2M x16
Single 2.7-3.6V Read and Write Operations
Superior Reliability
– Endurance: 100,000 Cycles (typical)
– Greater than 100 years Data Retention
Low Power Consumption (typical values at 5 MHz)
– Active Current: 9 mA (typical)
– Standby Current: 3 μA (typical)
– Auto Low Power Mode: 3 μA (typical)
Sector-Erase Capability
– Uniform 2 KWord sectors
Block-Erase Capability
– Uniform 32 KWord blocks
Fast Read Access Time
– 70 ns
– 90 ns
Latched Address and Data
Fast Erase and Word-Program
– Sector-Erase Time: 18 ms (typical)
– Block-Erase Time: 18 ms (typical)
– Chip-Erase Time: 40 ms (typical)
– Word-Program Time: 7 μs (typical)
– Chip Rewrite Time:
15 seconds (typical)
Automatic Write Timing
– Internal V
PP
Generation
End-of-Write Detection
– Toggle Bit
– Data# Polling
CMOS I/O Compatibility
JEDEC Standard
– Flash EEPROM Pinouts and command sets
Packages Available
– 48-lead TSOP (12mm x 20mm)
– 48-ball TFBGA (6mm x 8mm)
PRODUCT DESCRIPTION
The SST39VF320 devices are 2M x16 CMOS Multi-Pur-
pose Flash (MPF) manufactured with SST's proprietary,
high performance CMOS SuperFlash technology. The
split-gate cell design and thick-oxide tunneling injector
attain better reliability and manufacturability compared with
alternate approaches. The SST39VF320 write (Program or
Erase) with a 2.7-3.6V power supply.
Featuring
SST39VF320 devices provide a typical Word-Program
time of 7 μsec. The devices use Toggle Bit or Data# Polling
to indicate the completion of Program operation. To protect
against inadvertent write, these devices have on-chip hard-
ware and software data protection schemes. Designed,
manufactured, and tested for a wide spectrum of applica-
tions, the SST39VF320 are offered with a guaranteed typi-
cal endurance of 100,000 cycles. Data retention is rated at
greater than 100 years.
high
performance
Word-Program,
the
The SST39VF320 devices are suited for applications that
require convenient and economical updating of program,
configuration, or data memory. For all system applications,
the SST39VF320 significantly improve performance and
reliability, while lowering power consumption. The
SST39VF320 inherently use less energy during Erase and
Program than alternative flash technologies. The total
energy consumed is a function of the applied voltage, cur-
rent, and time of application. Since for any given voltage
range, the SuperFlash technology uses less current to pro-
gram and has a shorter erase time, the total energy con-
sumed during any Erase or Program operation is less than
alternative flash technologies. The devices also improve
flexibility while lowering the cost for program, data, and con-
figuration storage applications.
The SuperFlash technology provides fixed Erase and Pro-
gram times, independent of the number of Erase/Program
cycles that have occurred. Therefore the system software
or hardware does not have to be modified or de-rated as is
necessary with alternative flash technologies, whose Erase
and Program times increase with accumulated Erase/Pro-
gram cycles.
To meet high density, surface mount requirements, the
SST39VF320 is offered in 48-lead TSOP and 48-ball
TFBGA packages. See Figures 1 and 2 for pinouts.
Device Operation
Commands are used to initiate the memory operation func-
tions of the device. Commands are written to the device
using standard microprocessor write sequences. A com-
mand is written by asserting WE# low while keeping CE#
low. The address bus is latched on the falling edge of WE#
or CE#, whichever occurs last. The data bus is latched on
the rising edge of WE# or CE#, whichever occurs first.
SST39VF3202.7V 32Mb (x16) MPF memory
相關(guān)PDF資料
PDF描述
SST39VF320-70-4C-EKE 64 Mbit (x16) Multi-Purpose Flash Plus
SST39VF320-70-4I-B3K 64 Mbit (x16) Multi-Purpose Flash Plus
SST39VF320-70-4I-B3KE 64 Mbit (x16) Multi-Purpose Flash Plus
SST39VF320-70-4I-EK 64 Mbit (x16) Multi-Purpose Flash Plus
SST39VF320-70-4I-EKE 64 Mbit (x16) Multi-Purpose Flash Plus
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SST39VF320-70-4C-EKE 功能描述:閃存 2M X 16 70ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
SST39VF400A-70-4C-B3K 功能描述:閃存 256K X 16 70ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
SST39VF400A-70-4C-B3KE 功能描述:閃存 256K X 16 70ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
SST39VF400A-70-4C-B3KE-T 功能描述:閃存 4M (256Kx16) 70ns 2.7-3.6V Commercial RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
SST39VF400A-70-4C-C1QE 功能描述:閃存 2.7V to 3.6V 4Mb Multi-Purpose 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
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