參數(shù)資料
型號(hào)： SST39VF1601-70-4I-B3KE
廠(chǎng)商： SILICON STORAGE TECHNOLOGY INC
元件分類(lèi)： PROM
英文描述： 64 Mbit (x16) Multi-Purpose Flash Plus
中文描述： 1M X 16 FLASH 2.7V PROM, 70 ns, PBGA48
封裝： 6 X 8 MM, 0.80 MM PITCH, ROHS COMPLIANT, MO-210AB-1, TFBGA-48
文件頁(yè)數(shù)： 1/29頁(yè)
文件大小： 474K
代理商： SST39VF1601-70-4I-B3KE
Preliminary Specifications
2003 Silicon Storage Technology, Inc.
S71243-03-000
1
11/03
The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.
MPF is a trademark of Silicon Storage Technology, Inc.
These specifications are subject to change without notice.
16 Mbit (x8) Multi-Purpose Flash Plus
SST39VF1681 / SST39VF1682
FEATURES:
Organized as 2M x8
Single Voltage Read and Write Operations
– 2.7-3.6V
Superior Reliability
– Endurance: 100,000 Cycles (Typical)
– Greater than 100 years Data Retention
Low Power Consumption (typical values at 5 MHz)
– Active Current: 9 mA (typical)
– Standby Current: 3 μA (typical)
– Auto Low Power Mode: 3 μA (typical)
Hardware Block-Protection/WP# Input Pin
– Top Block-Protection (top 64 KByte)
for SST39VF1682
– Bottom Block-Protection (bottom 64 KByte)
for SST39VF1681
Sector-Erase Capability
– Uniform 4 KByte sectors
Block-Erase Capability
– Uniform 64 KByte blocks
Chip-Erase Capability
Erase-Suspend/Erase-Resume Capabilities
Hardware Reset Pin (RST#)
Security-ID Feature
– SST: 128 bits; User: 128 bits
Fast Read Access Time:
– 70 ns
– 90 ns
Latched Address and Data
Fast Erase and Byte-Program:
– Sector-Erase Time: 18 ms (typical)
– Block-Erase Time: 18 ms (typical)
– Chip-Erase Time: 40 ms (typical)
– Byte-Program Time: 7 μs (typical)
Automatic Write Timing
– Internal V
PP
Generation
End-of-Write Detection
– Toggle Bits
– Data# Polling
CMOS I/O Compatibility
JEDEC Standard
– Flash EEPROM Pinouts and Command sets
Packages Available
– 48-ball TFBGA (6mm x 8mm)
– 48-lead TSOP (12mm x 20mm)
PRODUCT DESCRIPTION
The SST39VF168x devices are 2M x8 CMOS Multi-Pur-
pose Flash Plus (MPF+) manufactured with SST’s propri-
etary, high performance CMOS SuperFlash technology.
The split-gate cell design and thick-oxide tunneling injec-
tor attain better reliability and manufacturability compared
with alternate approaches. The SST39VF168x write (Pro-
gram or Erase) with a 2.7-3.6V power supply. These
devices conform to JEDEC standard pinouts for x8 mem-
ories.
Featuring
SST39VF168x devices provide a typical Byte-Program
time of 7 μsec. These devices use Toggle Bit or Data# Poll-
ing to indicate the completion of Program operation. To pro-
tect against inadvertent write, they have on-chip hardware
and Software Data Protection schemes. Designed, manu-
factured, and tested for a wide spectrum of applications,
these devices are offered with a guaranteed typical endur-
ance of 100,000 cycles. Data retention is rated at greater
than 100 years.
high
performance
Byte-Program,
the
The SST39VF168x devices are suited for applications that
require convenient and economical updating of program,
configuration, or data memory. For all system applications,
they significantly improve performance and reliability, while
lowering power consumption. They inherently use less
energy during Erase and Program than alternative flash
technologies. The total energy consumed is a function of
the applied voltage, current, and time of application. Since
for any given voltage range, the SuperFlash technology
uses less current to program and has a shorter erase time,
the total energy consumed during any Erase or Program
operation is less than alternative flash technologies. These
devices also improve flexibility while lowering the cost for
program, data, and configuration storage applications.
The SuperFlash technology provides fixed Erase and Pro-
gram times, independent of the number of Erase/Program
cycles that have occurred. Therefore the system software
or hardware does not have to be modified or de-rated as is
necessary with alternative flash technologies, whose
Erase and Program times increase with accumulated
Erase/Program cycles.
To meet high density, surface mount requirements, the
SST39VF168x are offered in both 48-ball TFBGA and
48-lead TSOP packages. See Figures 1 and 2 for pin
assignments.
SST39VF1681 / 16822.7V 16Mb (x8) MPF+ memories
相關(guān)PDF資料
PDF描述
SST39VF1601-90-4I-B3KE 64 Mbit (x16) Multi-Purpose Flash Plus
SST39VF1602-70-4C-B3KE 64 Mbit (x16) Multi-Purpose Flash Plus
SST39VF1602-90-4C-B3KE 64 Mbit (x16) Multi-Purpose Flash Plus
SST39VF1602-70-4I-B3KE 64 Mbit (x16) Multi-Purpose Flash Plus
SST39VF1602-90-4I-B3KE 64 Mbit (x16) Multi-Purpose Flash Plus
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SST39VF1601-70-4I-B3KE-T 功能描述:閃存 2.7 to 3.6V 16Mbit Multi-Purpose 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線(xiàn)寬度:1 bit 存儲(chǔ)類(lèi)型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類(lèi)型: 接口類(lèi)型:SPI 訪(fǎng)問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
SST39VF1601-70-4I-EK 制造商:Silicon Storage Technology (SST) 功能描述:NOR Flash, 1M x 16, 48 Pin, Plastic, TSSOP
SST39VF1601-70-4I-EKE 功能描述:閃存 16M (1Mx16) 70ns Industrial Temp RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線(xiàn)寬度:1 bit 存儲(chǔ)類(lèi)型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類(lèi)型: 接口類(lèi)型:SPI 訪(fǎng)問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
SST39VF1601-70-4I-EKE-T 功能描述:閃存 2.7 to 3.6V 16Mbit Multi-Purpose 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線(xiàn)寬度:1 bit 存儲(chǔ)類(lèi)型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類(lèi)型: 接口類(lèi)型:SPI 訪(fǎng)問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
SST39VF1601C-70-4C-B3K 制造商:Microchip Technology Inc 功能描述:IC, Memory;Type, Multi Purpose Flash+ (MPF+);16Mbit (1MX16);70nS;TFBGA-48
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠(chǎng)商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*