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| 型號： | SST39VF020-70-4I-NHE |
| 廠商： | SILICON STORAGE TECHNOLOGY INC |
| 元件分類： | PROM |
| 英文描述： | 64 Mbit (x16) Multi-Purpose Flash Plus |
| 中文描述： | 256K X 8 FLASH 2.7V PROM, 70 ns, PQCC32 |
| 封裝： | ROHS COMPLIANT, PLASTIC, MS-016AE, LCC-32 |
| 文件頁數(shù)： | 8/25頁 |
| 文件大小： | 375K |
| 代理商： | SST39VF020-70-4I-NHE |
8
Data Sheet
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash
SST39LF512 / SST39LF010 / SST39LF020 / SST39LF040
SST39VF512 / SST39VF010 / SST39VF020 / SST39VF040
2005 Silicon Storage Technology, Inc.
S71150-09-000
1/06
TABLE
5: DC O
PERATING
C
HARACTERISTICS
V
DD
= 3.0-3.6V
FOR
SST39LF512/010/020/040
AND
2.7-3.6V
FOR
SST39VF512/010/020/040
1
Symbol
I
DD
Parameter
Power Supply Current
Limits
Max
Test Conditions
Address input=V
ILT
/V
IHT
, at f=1/T
RC
Min
V
DD
=V
DD
Max
CE#=V
IL
, OE#=WE#=V
IH
, all I/Os open
CE#=WE#=V
IL
, OE#=V
IH
CE#=V
IHC
, V
DD
=V
DD
Max
V
IN
=GND to V
DD
, V
DD
=V
DD
Max
V
OUT
=GND to V
DD
, V
DD
=V
DD
Max
V
DD
=V
DD
Min
V
DD
=V
DD
Max
V
DD
=V
DD
Max
I
OL
=100 μA, V
DD
=V
DD
Min
I
OH
=-100 μA, V
DD
=V
DD
Min
Min
Units
Read
2
Program and Erase
3
Standby V
DD
Current
Input Leakage Current
Output Leakage Current
Input Low Voltage
Input High Voltage
Input High Voltage (CMOS)
Output Low Voltage
Output High Voltage
20
30
15
1
10
0.8
mA
mA
μA
μA
μA
V
V
V
V
V
I
SB
I
LI
I
LO
V
IL
V
IH
V
IHC
V
OL
V
OH
0.7V
DD
V
DD
-0.3
0.2
V
DD
-0.2
T5.7 1150
1. Typical conditions for the Active Current shown on the front data sheet page are average values at 25°C
(room temperature), and V
DD
= 3V for VF devices. Not 100% tested.
2. Values are for 70 ns conditions. See the
Multi-Purpose Flash Power Rating
application note for further information.
3. 30 mA max for Erase operations in the industrial temperature range.
TABLE
6: R
ECOMMENDED
S
YSTEM
P
OWER
-
UP
T
IMINGS
Symbol
T
PU-READ1
T
PU-WRITE1
Parameter
Power-up to Read Operation
Power-up to Program/Erase Operation
Minimum
100
100
Units
μs
μs
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
T6.1 1150
TABLE
7: C
APACITANCE
(Ta = 25°C, f=1 Mhz, other pins open)
Parameter
C
I/O1
C
IN1
Description
I/O Pin Capacitance
Input Capacitance
Test Condition
V
I/O
= 0V
V
IN
= 0V
Maximum
12 pF
6 pF
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
T7.0 1150
TABLE
8: R
ELIABILITY
C
HARACTERISTICS
Symbol
N
END1,2
T
DR1
I
LTH1
Parameter
Endurance
Data Retention
Latch Up
Minimum Specification
10,000
100
100 + I
DD
Units
Cycles
Years
mA
Test Method
JEDEC Standard A117
JEDEC Standard A103
JEDEC Standard 78
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
2. N
END
endurance rating is qualified as a 10,000 cycle minimum for the whole device. A sector- or block-level rating would result in a
higher minimum specification.
T8.3 1150
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| SST39VF020-70-4I-WH | 功能描述:閃存 256K X 8 70ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| SST39VF020-70-4I-WHE | 功能描述:閃存 256K X 8 70ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| SST39VF020-90-4C-NH | 功能描述:閃存 U 804-39VF0207CNH RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| SST39VF020-90-4C-WH | 功能描述:閃存 U 804-39VF0207CWH RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| SST39VF020-90-4I-NH | 制造商:SST 功能描述: |
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