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參數(shù)資料
| 型號： | SST39SF512-70-4C-NHE |
| 廠商： | SILICON STORAGE TECHNOLOGY INC |
| 元件分類： | PROM |
| 英文描述： | 64 Mbit (x16) Multi-Purpose Flash Plus |
| 中文描述： | 64K X 8 FLASH 5V PROM, 70 ns, PQCC32 |
| 封裝： | PLASTIC, LEAD FREE, MS-016AE, LCC-32 |
| 文件頁數(shù)： | 1/22頁 |
| 文件大小： | 275K |
| 代理商： | SST39SF512-70-4C-NHE |
2003 Silicon Storage Technology, Inc.
S71149-05-000
1
11/03
The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.
MPF is a trademark of Silicon Storage Technology, Inc.
These specifications are subject to change without notice.
Data Sheet
512 Kbit (x8) Multi-Purpose Flash
SST39SF512
FEATURES:
Organized as 64K x8
Single 4.5-5.5V Read and Write Operations
Superior Reliability
– Endurance: 100,000 Cycles (typical)
– Greater than 100 years Data Retention
Low Power Consumption
(typical values at 14 MHz)
– Active Current: 10 mA (typical)
– Standby Current: 10 μA (typical)
Sector-Erase Capability
– Uniform 4 KByte sectors
Fast Read Access Time:
– 70 ns
Latched Address and Data
Fast Erase and Byte-Program
– Sector-Erase Time: 7 ms (typical)
– Chip-Erase Time: 15 ms (typical)
– Byte-Program Time: 20 μs (typical)
– Chip Rewrite Time: 2 seconds (typical)
Automatic Write Timing
– Internal V
PP
Generation
End-of-Write Detection
– Toggle Bit
– Data# Polling
TTL I/O Compatibility
JEDEC Standard
– Flash EEPROM Pinouts and command sets
Packages Available
– 32-lead PLCC
– 32-lead TSOP (8mm x 14mm)
– 32-pin PDIP
PRODUCT DESCRIPTION
The SST39SF512 are CMOS Multi-Purpose Flash (MPF)
manufactured with SST’s proprietary, high performance
CMOS SuperFlash technology. The split-gate cell design
and thick-oxide tunneling injector attain better reliability and
manufacturability compared with alternate approaches.
The SST39SF512 devices write (Program or Erase) with a
4.5-5.5V power supply. The SST39SF512 device conforms
to JEDEC standard pinouts for x8 memories.
Featuring
SST39SF512 devices provide a maximum Byte-Program
time of 30 μsec. These devices use Toggle Bit or Data#
Polling to indicate the completion of Program operation. To
protect against inadvertent write, they have on-chip hard-
ware and Software Data Protection schemes. Designed,
manufactured, and tested for a wide spectrum of applica-
tions, these devices are offered with a guaranteed typical
endurance of 100,000 cycles. Data retention is rated at
greater than 100 years.
high
performance
Byte-Program,
the
The SST39SF512 devices are suited for applications that
require convenient and economical updating of program,
configuration, or data memory. For all system applications,
they significantly improve performance and reliability, while
lowering power consumption. They inherently use less
energy during erase and program than alternative flash
technologies. The total energy consumed is a function of
the applied voltage, current, and time of application. Since
for any given voltage range, the SuperFlash technology
uses less current to program and has a shorter erase time,
the total energy consumed during any Erase or Program
operation is less than alternative flash technologies. These
devices also improve flexibility while lowering the cost for
program, data, and configuration storage applications.
The SuperFlash technology provides fixed Erase and Pro-
gram times, independent of the number of Erase/Program
cycles that have occurred. Therefore the system software
or hardware does not have to be modified or de-rated as is
necessary with alternative flash technologies, whose Erase
and Program times increase with accumulated Erase/Pro-
gram cycles.
To meet high density, surface mount requirements, the
SST39SF512 are offered in 32-lead PLCC, 32-lead TSOP
and a 600 mil, 32-pin PDIP packages. See Figures 1, 2,
and 3 for pin assignments.
SST39SF5125.0V 512Kb (x8) MPF memory
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SST39SF512-70-4C-PH | 功能描述:閃存 64K X 8 70ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| SST39SF512-70-4C-PHE | 功能描述:閃存 64K X 8 70ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| SST39SF512-70-4C-WH | 功能描述:閃存 64K X 8 70ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| SST39SF512-70-4C-WHE | 功能描述:閃存 64K X 8 70ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| SST39SF512-70-4I-NH | 功能描述:閃存 64K X 8 70ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
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