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參數(shù)資料
| 型號： | SST39SF040-70-4I-WH |
| 廠商： | SILICON STORAGE TECHNOLOGY INC |
| 元件分類： | PROM |
| 英文描述： | 64 Mbit (x16) Multi-Purpose Flash Plus |
| 中文描述： | 512K X 8 FLASH 5V PROM, 70 ns, PDSO32 |
| 封裝： | 8 X 14 MM, MO-142BA, TSOP1-32 |
| 文件頁數(shù)： | 8/22頁 |
| 文件大?。?/td> | 271K |
| 代理商： | SST39SF040-70-4I-WH |
8
Preliminary Specification
1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash
SST39SF010A / SST39SF020A / SST39SF040
2001 Silicon Storage Technology, Inc.
S71147-02-000
5/01
398
TABLE
5: DC O
PERATING
C
HARACTERISTICS
V
DD
= 5.0V±10%
Symbol
I
DD
Parameter
Power Supply Current
Limits
Max
Test Conditions
Address input=V
IL
/V
IH
, at f=1/T
RC
Min
V
DD
=V
DD
Max
CE#=OE#=V
IL
, WE#=V
IH
, all I/Os open
CE#=WE#=V
IL
, OE#=V
IH
CE#=V
IH
, V
DD
=V
DD
Max
Min
Units
Read
Write
Standby V
DD
Current
(TTL input)
Standby V
DD
Current
(CMOS input)
Input Leakage Current
Output Leakage Current
Input Low Voltage
Input High Voltage
Input High Voltage (CMOS)
Output Low Voltage
Output High Voltage
25
25
3
mA
mA
mA
I
SB1
I
SB2
100
μA
CE#=V
IHC
, V
DD
=V
DD
Max
I
LI
I
LO
V
IL
V
IH
V
IHC
V
OL
V
OH
1
μA
μA
V
V
V
V
V
V
IN
=GND to V
DD
, V
DD
=V
DD
Max
V
OUT
=GND to V
DD
, V
DD
=V
DD
Max
V
DD
=V
DD
Min
V
DD
=V
DD
Max
V
DD
=V
DD
Max
I
OL
=2.1 mA, V
DD
=V
DD
Min
I
OH
=-400 μA, V
DD
=V
DD
Min
10
0.8
2.0
V
DD
-0.3
0.4
2.4
T5.4 398
TABLE
6: R
ECOMMENDED
S
YSTEM
P
OWER
-
UP
T
IMINGS
Symbol
T
PU-READ1
T
PU-WRITE1
Parameter
Power-up to Read Operation
Power-up to Program/Erase Operation
Minimum
100
100
Units
μs
μs
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
T6.1 398
TABLE
7: C
APACITANCE
(Ta = 25
°
C, f=1 Mhz, other pins open)
Parameter
C
I/O1
C
IN1
Description
I/O Pin Capacitance
Input Capacitance
Test Condition
V
I/O
= 0V
V
IN
= 0V
Maximum
12 pF
6 pF
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
T7.0 398
TABLE
8: R
ELIABILITY
C
HARACTERISTICS
Symbol
N
END1
T
DR1
I
LTH1
Parameter
Endurance
Data Retention
Latch Up
Minimum Specification
10,000
Units
Cycles
Years
mA
Test Method
JEDEC Standard A117
JEDEC Standard A103
JEDEC Standard 78
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
100
100 + I
DD
T8.1 398
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| SST39SF040-70-4I-WHE | 功能描述:閃存 512K X 8 70ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| SST39SF040-70-4I-WHE-T | 功能描述:閃存 4.5 to 5.5 4Mbit Multi-Purpose 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| SST39SF512 | 制造商:SST 制造商全稱:Silicon Storage Technology, Inc 功能描述:512 Kbit / 1 Mbit (x8) Multi-Purpose Flash |
| SST39SF512_03 | 制造商:SST 制造商全稱:Silicon Storage Technology, Inc 功能描述:512 Kbit / 1 Mbit (x8) Multi-Purpose Flash |
| SST39SF512-70-4C-NH | 功能描述:閃存 64K X 8 70ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
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