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參數(shù)資料
| 型號： | SST39SF040-45-4I-PH |
| 廠商： | Silicon Storage Technology, Inc. |
| 元件分類： | FLASH |
| 英文描述： | 64 Mbit (x16) Multi-Purpose Flash Plus |
| 中文描述： | 64兆位（x16）的多功能閃存加 |
| 文件頁數(shù)： | 1/22頁 |
| 文件大?。?/td> | 271K |
| 代理商： | SST39SF040-45-4I-PH |
2001 Silicon Storage Technology, Inc.
S71147-02-000
5/01
1
398
The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.
MPF is a trademark of Silicon Storage Technology, Inc.
These specifications are subject to change without notice.
Preliminary Specification
1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
SST39SF010A / SST39SF020A / SST39SF040
FEATURES:
Organized as 128K x8 / 256K x8 / 512K x8
Single 5.0V Read and Write Operations
Superior Reliability
– Endurance: 100,000 Cycles (typical)
– Greater than 100 years Data Retention
Low Power Consumption:
–
Active Current: 10 mA (typical)
–
Standby Current: 30 μA (typical)
Sector-Erase Capability
–
Uniform 4 KByte sectors
Fast Read Access Time:
–
45 and 70 ns
Latched Address and Data
Fast Erase and Byte-Program:
–
Sector-Erase Time: 18 ms (typical)
–
Chip-Erase Time: 70 ms (typical)
–
Byte-Program Time: 14 μs (typical)
–
Chip Rewrite Time:
2 seconds (typical) for SST39SF010A
4 seconds (typical) for SST39SF020A
8 seconds (typical) for SST39SF040
Automatic Write Timing
–
Internal V
PP
Generation
End-of-Write Detection
–
Toggle Bit
–
Data# Polling
TTL I/O Compatibility
JEDEC Standard
–
Flash EEPROM Pinouts and command sets
Packages Available
–
32-pin PLCC
–
32-pin TSOP (8mm x 14mm)
–
32-pin PDIP
PRODUCT DESCRIPTION
The SST39SF010A/020A/040 are CMOS Multi-Purpose
Flash (MPF) manufactured with SST
’
s proprietary, high
performance CMOS SuperFlash technology. The split-gate
cell design and thick oxide tunneling injector attain better
reliability and manufacturability compared with alternate
approaches. The SST39SF010A/020A/040 devices write
(Program or Erase) with a 5.0V power supply. The
SST39SF010A/020A/040 devices conform to JEDEC stan-
dard pinouts for x8 memories.
Featuring
SST39SF010A/020A/040 devices provide a maximum
Byte-Program time of 20 μsec. These devices use Toggle
Bit or Data# Polling to indicate the completion of Program
operation. To protect against inadvertent write, they have
on-chip hardware and Software Data Protection schemes.
Designed, manufactured, and tested for a wide spectrum of
applications, these devices are offered with a guaranteed
endurance of 10,000 cycles. Data retention is rated at
greater than 100 years.
high
performance
Byte-Program,
the
The SST39SF010A/020A/040 devices are suited for appli-
cations that require convenient and economical updating of
program, configuration, or data memory. For all system
applications, they significantly improve performance and
reliability, while lowering power consumption. They inher-
ently use less energy during erase and program than alter-
native flash technologies. The total energy consumed is a
function of the applied voltage, current, and time of applica-
tion. Since for any given voltage range, the SuperFlash
technology uses less current to program and has a shorter
erase time, the total energy consumed during any Erase or
Program operation is less than alternative flash technolo-
gies. These devices also improve flexibility while lowering
the cost for program, data, and configuration storage appli-
cations.
The SuperFlash technology provides fixed Erase and Pro-
gram times, independent of the number of Erase/Program
cycles that have occurred. Therefore the system software
or hardware does not have to be modified or de-rated as is
necessary with alternative flash technologies, whose Erase
and Program times increase with accumulated Erase/Pro-
gram cycles.
To meet high density, surface mount requirements, the
SST39SF010A/020A/040 are offered in 32-pin PLCC and
32-pin TSOP packages. A 600 mil, 32-pin PDIP is also
available. See Figures 1, 2, and 3 for pinouts.
Device Operation
Commands are used to initiate the memory operation func-
tions of the device. Commands are written to the device
using standard microprocessor write sequences. A com-
mand is written by asserting WE# low while keeping CE#
SST39SF010A / 020A / 0405.0V 4Mb (x8) MPF memories
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SST39SF040-45-4I-WH | 功能描述:閃存 512K X 8 45ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| SST39SF040-45-4I-WHE | 功能描述:閃存 512K X 8 45ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| SST39SF040-45-4I-WHE-T | 功能描述:閃存 4.5 to 5.5 4Mbit Multi-Purpose 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| SST39SF040-55-4C-NHE | 功能描述:閃存 4.5 to 5.5 4Mbit Multi-Purpose 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| SST39SF040-55-4C-NHE-T | 功能描述:閃存 4.5 to 5.5 1Mbit Multi-Purpose 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
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