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參數(shù)資料
| 型號： | SST39SF020-70-4I-P |
| 廠商： | Silicon Storage Technology, Inc. |
| 元件分類： | FLASH |
| 英文描述： | 64 Mbit (x16) Multi-Purpose Flash Plus |
| 中文描述： | 64兆位（x16）的多功能閃存加 |
| 文件頁數(shù)： | 8/23頁 |
| 文件大?。?/td> | 231K |
| 代理商： | SST39SF020-70-4I-P |
8
1998 Silicon Storage Technology, Inc.
326-10 12/98
2 Megabit Multi-Purpose Flash
SST39SF020
Preliminary Specifications
T
ABLE
6: R
ECOMMENDED
S
YSTEM
P
OWER
-
UP
T
IMINGS
Symbol
Parameter
T
PU-READ(1)
Power-up to Read Operation
T
PU-WRITE(1)
Power-up to Write Operation
Minimum
100
100
Units
μs
μs
326 PGM T6.1
T
ABLE
7: C
APACITANCE
(Ta = 25 °C, f=1 Mhz, other pins open)
Parameter
Description
C
I/O(1)
I/O Pin Capacitance
C
IN(1)
Input Capacitance
Test Condition
V
I/O
= 0V
V
IN
= 0V
Maximum
12 pF
6 pF
Note:
(1)
This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
326 PGM T7.0
T
ABLE
8: R
ELIABILITY
C
HARACTERISTICS
Symbol
Parameter
N
END(1)
Endurance
T
DR(1)
Data Retention
V
ZAP_HBM(1)
ESD Susceptibility
Human Body Model
V
ZAP_MM(1)
ESD Susceptibility
Machine Model
I
LTH(1)
Latch Up
Minimum Specification
10,000
100
1000
Units
Cycles
Years
Volts
Test Method
MIL-STD-883, Method 1033
JEDEC Standard A103
JEDEC Standard A114
200
Volts
JEDEC Standard A115
100 + I
CC
mA
JEDEC Standard 78
Note:
(1)
This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
326 PGM T8.3
T
ABLE
5: DC O
PERATING
C
HARACTERISTICS
V
CC
= 5V
±
10%
Limits
Max
Symbol
I
CC
Parameter
Power Supply Current
Read
Min
Units
Test Conditions
CE#=OE#=V
IL,
WE#=V
IH
, all I/Os open,
Address input = V
IL
/V
IH
, at f=1/T
RC
Min.,
V
CC
=V
CC
Max
CE#=WE#=V
IL,
OE#=V
IH,
V
CC
=V
CC
Max.
CE#=V
IH,
V
CC
=V
CC
Max.
30
mA
Write
Standby V
CC
Current
50
3
mA
mA
I
SB1
(TTL input)
I
SB2
Standby V
CC
Current
(CMOS input)
Input Leakage Current
Output Leakage Current
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
Supervoltage for A
9
pin
Supervoltage Current
for A
9
pin
50
μA
CE#=V
CC
-0.3V.
V
CC
= V
CC
Max.
V
IN
=GND to V
CC
, V
CC
= V
CC
Max.
V
OUT
=GND to V
CC
, V
CC
= V
CC
Max.
V
CC
= V
CC
Max.
V
CC
= V
CC
Max.
I
OL
= 2.1 mA, V
CC
= V
CC
Min.
I
OH
= -400μA, V
CC
= V
CC
Min.
CE# = OE# =V
IL
, WE# = V
IH
CE# = OE# = V
IL
, WE# = V
IH
, A
9
= V
H
Max.
I
LI
I
LO
V
IL
V
IH
V
OL
V
OH
V
H
I
H
1
1
μA
μA
V
V
V
V
V
μA
0.8
2.0
0.4
2.4
11.4
12.6
200
326 PGM T5.2
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SST39SF020-70-4I-PH | 64 Mbit (x16) Multi-Purpose Flash Plus |
| SST39SF020-70-4I-U | 64 Mbit (x16) Multi-Purpose Flash Plus |
| SST39SF020-70-4I-W | 64 Mbit (x16) Multi-Purpose Flash Plus |
| SST39SF020-70-4I-WH | 64 Mbit (x16) Multi-Purpose Flash Plus |
| SST39SF020-90-4C-N | 64 Mbit (x16) Multi-Purpose Flash Plus |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SST39SF020-70-4I-PH | 制造商:SST 制造商全稱:Silicon Storage Technology, Inc 功能描述:2 Megabit (256K x 8) Multi-Purpose Flash |
| SST39SF020-70-4I-U | 制造商:SST 制造商全稱:Silicon Storage Technology, Inc 功能描述:2 Megabit (256K x 8) Multi-Purpose Flash |
| SST39SF020-70-4I-UH | 制造商:SST 制造商全稱:Silicon Storage Technology, Inc 功能描述:2 Megabit (256K x 8) Multi-Purpose Flash |
| SST39SF020-70-4I-W | 制造商:SST 制造商全稱:Silicon Storage Technology, Inc 功能描述:2 Megabit (256K x 8) Multi-Purpose Flash |
| SST39SF020-70-4I-WH | 制造商:SST 制造商全稱:Silicon Storage Technology, Inc 功能描述:2 Megabit (256K x 8) Multi-Purpose Flash |
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