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參數(shù)資料
| 型號(hào)： | SST39LF800A-70-4I-B3K |
| 廠(chǎng)商： | Silicon Storage Technology, Inc. |
| 元件分類(lèi)： | FLASH |
| 英文描述： | 64 Mbit (x16) Multi-Purpose Flash Plus |
| 中文描述： | 64兆位（x16）的多功能閃存加 |
| 文件頁(yè)數(shù)： | 12/30頁(yè) |
| 文件大小： | 340K |
| 代理商： | SST39LF800A-70-4I-B3K |
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12
Data Sheet
2 Mbit / 4 Mbit / 8 Mbit Multi-Purpose Flash
SST39LF200A / SST39LF400A / SST39LF800A
SST39VF200A / SST39VF400A / SST39VF800A
2001 Silicon Storage Technology, Inc.
S71117-04-000
6/01
360
TABLE 10: DC O
PERATING
C
HARACTERISTICS
V
DD
= 3.0-3.6V
FOR
SST39LF200A/400A/800A
AND
2.7-3.6V
FOR
SST39VF200A/400A/800A
Symbol
I
DD
Parameter
Power Supply Current
Limits
Max
Test Conditions
Address input = V
IL
/V
IH
, at f=1/T
RC
Min.,
V
DD
=V
DD
Max.
CE#=OE#=V
IL
,WE#=V
IH
, all I/Os open
CE#=WE#=V
IL
, OE#=V
IH
CE#=V
IHC
, V
DD
= V
DD
Max.
V
IN
=GND to V
DD
, V
DD
= V
DD
Max.
V
OUT
=GND to V
DD
, V
DD
= V
DD
Max.
V
DD
= V
DD
Min.
V
DD
= V
DD
Max.
V
DD
= V
DD
Max.
I
OL
= 100 μA, V
DD
= V
DD
Min.
I
OH
= -100 μA, V
DD
= V
DD
Min.
Min
Units
Read
Program and Erase
Standby V
DD
Current
Input Leakage Current
Output Leakage Current
Input Low Voltage
Input High Voltage
Input High Voltage (CMOS)
Output Low Voltage
Output High Voltage
30
30
20
1
10
0.8
mA
mA
μA
μA
μA
I
SB
I
LI
I
LO
V
IL
V
IH
V
IHC
V
OL
V
OH
0.7V
DD
V
DD
-0.3
V
V
V
V
0.2
V
DD
-0.2
T10.5 360
TABLE 11: R
ECOMMENDED
S
YSTEM
P
OWER
-
UP
T
IMINGS
Symbol
T
PU-READ1
T
PU-WRITE1
Parameter
Power-up to Read Operation
Power-up to Program/Erase Operation
Minimum
100
100
Units
μs
μs
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
T11.0 360
TABLE 12: C
APACITANCE
(Ta = 25
°
C, f=1 Mhz, other pins open)
Parameter
C
I/O1
C
IN1
Description
I/O Pin Capacitance
Input Capacitance
Test Condition
V
I/O
= 0V
V
IN
= 0V
Maximum
12 pF
6 pF
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
T12.0 360
TABLE 13: R
ELIABILITY
C
HARACTERISTICS
Symbol
N
END1
T
DR1
I
LTH1
Parameter
Endurance
Data Retention
Latch Up
Minimum Specification
10,000
100
100 + I
DD
Units
Cycles
Years
mA
Test Method
JEDEC Standard A117
JEDEC Standard A103
JEDEC Standard 78
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
T13.1 360
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| SST39LF800A-70-4I-EK | 64 Mbit (x16) Multi-Purpose Flash Plus |
| SST39LF800A-90-4C-B3K | 64 Mbit (x16) Multi-Purpose Flash Plus |
| SST39VF800A | 64 Mbit (x16) Multi-Purpose Flash Plus |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SST39LF-800A-704I-B3KE | 制造商:SST 制造商全稱(chēng):Silicon Storage Technology, Inc 功能描述:2 Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash |
| SST39LF-800A-704I-B3QE | 制造商:SST 制造商全稱(chēng):Silicon Storage Technology, Inc 功能描述:2 Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash |
| SST39LF-800A-704I-C1KE | 制造商:SST 制造商全稱(chēng):Silicon Storage Technology, Inc 功能描述:2 Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash |
| SST39LF-800A-704I-C1QE | 制造商:SST 制造商全稱(chēng):Silicon Storage Technology, Inc 功能描述:2 Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash |
| SST39LF800A-70-4I-EK | 制造商:SST 制造商全稱(chēng):Silicon Storage Technology, Inc 功能描述:2 Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash |
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