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參數(shù)資料
| 型號： | SST39LF016-90-4C-EK |
| 廠商： | Silicon Storage Technology, Inc. |
| 元件分類： | FLASH |
| 英文描述： | 64 Mbit (x16) Multi-Purpose Flash Plus |
| 中文描述： | 64兆位（x16）的多功能閃存加 |
| 文件頁數(shù)： | 9/29頁 |
| 文件大?。?/td> | 474K |
| 代理商： | SST39LF016-90-4C-EK |
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Preliminary Specifications
16 Mbit Multi-Purpose Flash Plus
SST39VF1681 / SST39VF1682
9
2003 Silicon Storage Technology, Inc.
S71243-03-000
11/03
TABLE
Address
10H
11H
12H
13H
14H
15H
16H
17H
18H
19H
1AH
7: CFI Q
UERY
I
DENTIFICATION
S
TRING
1
Data
Data
51H
Query Unique ASCII string “QRY”
52H
59H
01H
Primary OEM command set
07H
00H
Address for Primary Extended Table
00H
00H
Alternate OEM command set (00H = none exists)
00H
00H
Address for Alternate OEM extended Table (00H = none exits)
00H
T7.1 1243
1. Refer to CFI publication 100 for more details.
TABLE
8: S
YSTEM
I
NTERFACE
I
NFORMATION
Address
1BH
Data
27H
Data
V
DD
Min (Program/Erase)
DQ
7
-DQ
4
: Volts, DQ
3
-DQ
0
: 100 millivolts
V
DD
Max (Program/Erase)
DQ
7
-DQ
4
: Volts, DQ
3
-DQ
0
: 100 millivolts
V
PP
min. (00H = no V
PP
pin)
V
PP
max. (00H = no V
PP
pin)
Typical time out for Byte-Program 2
N
μs (2
3
= 8 μs)
Typical time out for min. size buffer program 2
N
μs (00H = not supported)
Typical time out for individual Sector/Block-Erase 2
N
ms (2
4
= 16 ms)
Typical time out for Chip-Erase 2
N
ms (2
5
= 32 ms)
Maximum time out for Byte-Program 2
N
times typical (2
1
x 2
3
= 16 μs)
Maximum time out for buffer program 2
N
times typical
Maximum time out for individual Sector/Block-Erase 2
N
times typical (2
1
x 2
4
= 32 ms)
Maximum time out for Chip-Erase 2
N
times typical (2
1
x 2
5
= 64 ms)
1CH
36H
1DH
1EH
1FH
20H
21H
22H
23H
24H
25H
26H
00H
00H
03H
00H
04H
05H
01H
00H
01H
01H
T8.1 1243
TABLE
Address
27H
28H
29H
2AH
2BH
2CH
2DH
2EH
2FH
30H
31H
32H
33H
34H
9: D
EVICE
G
EOMETRY
I
NFORMATION
Data
Data
15H
Device size = 2
N
Bytes (15H = 21; 2
21
= 2 MByte)
00H
Flash Device Interface description; 00H = x8-only asynchronous interface
00H
00H
Maximum number of byte in multi-byte write = 2
N
(00H = not supported)
00H
02H
Number of Erase Sector/Block sizes supported by device
FFH
Sector Information (y + 1 = Number of sectors; z x 256B = sector size)
01H
y = 511 + 1 = 512 sectors (01FF = 511
10H
00H
z = 16 x 256 Bytes = 4 KByte/sector (0010H = 16)
1FH
Block Information (y + 1 = Number of blocks; z x 256B = block size)
00H
y = 31 + 1 = 32 blocks (1F = 31)
00H
01H
z = 256 x 256 Bytes = 64 KByte/block (0100H = 256)
T9.1 1243
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SST39VF016-90-4C-EK | 64 Mbit (x16) Multi-Purpose Flash Plus |
| SST39LF016-90-4I-B3I | 64 Mbit (x16) Multi-Purpose Flash Plus |
| SST39VF016-90-4I-B3I | 64 Mbit (x16) Multi-Purpose Flash Plus |
| SST39LF016-90-4I-B3K | 64 Mbit (x16) Multi-Purpose Flash Plus |
| SST39VF016-90-4I-B3K | 64 Mbit (x16) Multi-Purpose Flash Plus |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SST39LF016-90-4I-B3I | 制造商:SST 制造商全稱:Silicon Storage Technology, Inc 功能描述:8 Mbit / 16 Mbit (x8) Multi-Purpose Flash |
| SST39LF016-90-4I-B3K | 制造商:SST 制造商全稱:Silicon Storage Technology, Inc 功能描述:8 Mbit / 16 Mbit (x8) Multi-Purpose Flash |
| SST39LF016-90-4I-EI | 制造商:SST 制造商全稱:Silicon Storage Technology, Inc 功能描述:8 Mbit / 16 Mbit (x8) Multi-Purpose Flash |
| SST39LF016-90-4I-EK | 制造商:SST 制造商全稱:Silicon Storage Technology, Inc 功能描述:8 Mbit / 16 Mbit (x8) Multi-Purpose Flash |
| SST39LF020 | 制造商:SST 制造商全稱:Silicon Storage Technology, Inc 功能描述:512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash |
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