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參數(shù)資料
| 型號： | SST37VF020-70-3C-PH |
| 廠商： | SILICON STORAGE TECHNOLOGY INC |
| 元件分類： | PROM |
| 英文描述： | -bit AVR Microcontroller with 8K Bytes In- System Programmable Flash |
| 中文描述： | 256K X 8 FLASH 2.7V PROM, 70 ns, PDIP32 |
| 封裝： | PLASTIC, MO-015AP, DIP-32 |
| 文件頁數(shù)： | 6/16頁 |
| 文件大小： | 165K |
| 代理商： | SST37VF020-70-3C-PH |
6
Data Sheet
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash
SST37VF512 / SST37VF010 / SST37VF020 / SST37VF040
2001 Silicon Storage Technology, Inc.
S71151-02-000
5/01
397
TABLE
4: R
EAD
M
ODE
DC O
PERATING
C
HARACTERISTICS
V
DD
=2.7-3.6V
(Ta = 0
°
C to +70
°
C (Commercial))
Symbol
I
DD
Parameter
V
DD
Read Current
Limits
Max
Test Conditions
Address input=V
IL
/V
IH
, at f=1/T
RC
Min
V
DD
=V
DD
Max
CE#=OE#=V
IL
, all I/Os open
CE#=V
IHC
, V
DD
=V
DD
Max
V
IN
=GND to V
DD
, V
DD
=V
DD
Max
V
OUT
=GND to V
DD
, V
DD
=V
DD
Max
V
DD
=V
DD
Min
V
DD
=V
DD
Max
V
DD
=V
DD
Max
I
OL
=100 μA, V
DD
=V
DD
Min
I
OH
=-100 μA, V
DD
=V
DD
Min
CE#=OE#=V
IL
, A
9
=V
H
Max
Min
Units
12
15
1
10
0.8
mA
μA
μA
μA
V
V
V
V
V
μA
I
SB
I
LI
I
LO
V
IL
V
IH
V
IHC
V
OL
V
OH
I
H
Standby V
DD
Current
Input Leakage Current
Output Leakage Current
Input Low Voltage
Input High Voltage
Input High Voltage (CMOS)
Output Low Voltage
Output High Voltage
Supervoltage Current for A
9
for Read-ID
0.7 V
DD
V
DD
-0.3
0.2
V
DD
-0.3
200
T4.3 397
TABLE
5: P
ROGRAM
/E
RASE
DC O
PERATING
C
HARACTERISTICS
V
DD
=2.7-3.6V
(Ta = 25
°
C±5
°
C)
Symbol Parameter
I
DD
V
DD
Erase or Program Current
I
LI
Input Leakage Current
I
LO
Output Leakage Current
V
H
Supervoltage for A
9
and OE#
I
H
Supervoltage Current for A
9
and OE#
Limits
Max
20
1
10
12.6
200
Test Conditions
CE#=V
IL,
OE#=V
H
, V
DD
=V
DD
Max, WE#=V
IL
V
IN
=GND to V
DD
, V
DD
=V
DD
Max
V
OUT
=GND to V
DD
, V
DD
=V
DD
Max
Min
Units
mA
μA
μA
V
μA
11.4
OE#=V
H
Max, A
9
=V
H
Max, V
DD
=V
DD
Max, CE# = V
IL
T5.1 397
TABLE
6: R
ECOMMENDED
S
YSTEM
P
OWER
-
UP
T
IMINGS
Symbol
T
PU-READ1
T
PU-WRITE1
Parameter
Power-up to Read Operation
Power-up to Write Operation
Minimum
100
100
Units
μs
μs
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
T6.1 397
TABLE
7: C
APACITANCE
(Ta = 25
°
C, f=1 Mhz, other pins open)
Parameter
C
I/O1
C
IN1
Description
I/O Pin Capacitance
Input Capacitance
Test Condition
V
I/O
= 0V
V
IN
= 0V
Maximum
12 pF
6 pF
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
T7.0 397
TABLE
8: R
ELIABILITY
C
HARACTERISTICS
Symbol
N
END1
T
DR1
I
LTH1
Parameter
Endurance
Data Retention
Latch Up
Minimum Specification
10,000
Units
Cycles
Years
mA
Test Method
JEDEC Standard A117
JEDEC Standard A103
JEDEC Standard 78
100
100 + I
DD
T8.3 397
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SST37VF020-70-3C-PHE | 制造商:SST 制造商全稱:Silicon Storage Technology, Inc 功能描述:512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Many-Time Programmable Flash |
| SST37VF020-70-3C-WH | 功能描述:閃存 256K X 8 70ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| SST37VF020-70-3C-WHE | 功能描述:閃存 256K X 8 70ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| SST37VF020-70-3I-NH | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM |
| SST37VF020-70-3I-WH | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM |
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