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參數(shù)資料
| 型號： | SST36VF1601-70-4E-EK |
| 廠商： | SILICON STORAGE TECHNOLOGY INC |
| 元件分類： | PROM |
| 英文描述： | 16 Mbit Concurrent SuperFlash |
| 中文描述： | 1M X 16 FLASH 2.7V PROM, 70 ns, PDSO48 |
| 封裝： | 12 X 20 MM, TSOP1-48 |
| 文件頁數(shù)： | 17/26頁 |
| 文件大?。?/td> | 404K |
| 代理商： | SST36VF1601-70-4E-EK |
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Data Sheet
16 Mbit Concurrent SuperFlash
SST36VF1601
17
2001 Silicon Storage Technology, Inc.
S71142-06-000
11/01 373
FIGURE 10: WE# C
ONTROLLED
B
LOCK
-E
RASE
T
IMING
D
IAGRAM
FIGURE 11: WE# C
ONTROLLED
S
ECTOR
-E
RASE
T
IMING
D
IAGRAM
373 ILL F28.8
ADDRESSES
DQ15-0
WE#
SW0
SW1
SW2
SW3
SW4
SW5
5555
2AAA
2AAA
5555
5555
XX55
XX50
XX55
XXAA
XX80
XXAA
BAX
OE#
CE#
SIX-BYTE CODE FOR BLOCK-ERASE
TBE
TWP
Note: This device also supports CE# controlled Block-Erase operation. The WE# and CE#
signals are interchageable as long as minimum timings are met. (See Table 13)
BAX = Block Address
X can be VIL or VIH, but no other value.
RY/BY#
VALID
TBY
TBR
373 ILL F29.8
ADDRESSES
DQ15-0
WE#
SW0
SW1
SW2
SW3
SW4
SW5
5555
2AAA
2AAA
5555
5555
XX55
XX30
XX55
XXAA
XX80
XXAA
SAX
OE#
CE#
SIX-BYTE CODE FOR SECTOR-ERASE
TSE
TWP
Note: This device also supports CE# controlled Sector-Erase operation. The WE# and CE#
signals are interchageable as long as minimum timings are met. (See Table 13)
SAX = Sector Address
X can be VIL or VIH, but no other value.
RY/BY#
TBY
TBR
VALID
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SST36VF1601-90-4C-BK | 制造商:SST 制造商全稱:Silicon Storage Technology, Inc 功能描述:16 Megabit Concurrent SuperFlash |
| SST36VF1601-90-4C-EK | 制造商:SST 制造商全稱:Silicon Storage Technology, Inc 功能描述:16 Megabit Concurrent SuperFlash |
| SST36VF1601-90-4E-BK | 制造商:SST 制造商全稱:Silicon Storage Technology, Inc 功能描述:16 Megabit Concurrent SuperFlash |
| SST36VF1601-90-4E-EK | 制造商:SST 制造商全稱:Silicon Storage Technology, Inc 功能描述:16 Megabit Concurrent SuperFlash |
| SST36VF1601C | 制造商:SST 制造商全稱:Silicon Storage Technology, Inc 功能描述:16 Mbit (x8/x16) Dual-Bank Flash Memory |
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