參數資料
型號: SST36VF1601-70-4C-EK
廠商: SILICON STORAGE TECHNOLOGY INC
元件分類: PROM
英文描述: 16 Mbit Concurrent SuperFlash
中文描述: 1M X 16 FLASH 2.7V PROM, 70 ns, PDSO48
封裝: 12 X 20 MM, TSOP1-48
文件頁數: 8/26頁
文件大小: 404K
代理商: SST36VF1601-70-4C-EK
8
Data Sheet
16 Mbit Concurrent SuperFlash
SST36VF1601
2001 Silicon Storage Technology, Inc.
S71142-06-000
11/01 373
TABLE
2: P
IN
D
ESCRIPTION
Symbol
A
19
-A
0
Name
Functions
Address Inputs
To provide memory addresses. During Sector-Erase and Hardware Sector Protection,
A
19
-A
10
address lines will select the sector. During Block-Erase A
19
-A
15
address lines
will select the block.
To output data during Read cycles and receive input data during Write cycles
Data is internally latched during a Write cycle. The outputs are in tri-state when OE#
or CE# is high.
To activate the device when CE# is low.
To gate the data output buffers
To control the Write operations
To reset and return the device to Read mode
To output the status of a Program or Erase Operation
RY/BY# is a open drain output, so a 10K
- 100K
pull-up resistor is required to allow
RY/BY# to transition high indicating the device is ready to read.
To protect and unprotect the bottom 4 sectors from Erase or Program operation.
To provide 2.7-3.6V power supply voltage
DQ
15
-DQ
0
Data Input/output
CE#
OE#
WE#
RST#
RY/BY#
Chip Enable
Output Enable
Write Enable
Hardware Reset
Ready/Busy#
WP#
V
DD
V
SS
NC
Write Protect
Power Supply
Ground
No Connection
Unconnected pins
T2.6 373
TABLE
3: O
PERATION
M
ODES
S
ELECTION
Mode
Read
Program
Erase
CE#
V
IL
V
IL
V
IL
OE#
V
IL
V
IH
V
IH
WE#
V
IH
V
IL
V
IL
DQ
D
OUT
D
IN
X
1
Address
A
IN
A
IN
1. X can be VIL or VIH, but no other value.
2. Device ID = 2761H
Sector or block address,
XXH for Chip-Erase
X
X
X
Standby
Write Inhibit
V
IH
X
X
X
V
IL
X
X
X
High Z
High Z / D
OUT
High Z / D
OUT
V
IH
Product Identification
Software Mode
V
IL
V
IL
V
IH
Manufacturer’s ID (00BFH)
Device ID
2
See Table 4
T3.6 373
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