- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄365699 > SST34HF1642D-70-4E-B1PE (Silicon Storage Technology, Inc.) 16 Mbit Concurrent SuperFlash + 2/4/8 Mbit SRAM ComboMemory PDF資料下載
參數(shù)資料
| 型號： | SST34HF1642D-70-4E-B1PE |
| 廠商： | Silicon Storage Technology, Inc. |
| 元件分類： | 組合存儲器 |
| 英文描述： | 16 Mbit Concurrent SuperFlash + 2/4/8 Mbit SRAM ComboMemory |
| 中文描述： | 16兆兆位并行的SuperFlash 2/4/8 SRAM的ComboMemory |
| 文件頁數(shù)： | 19/38頁 |
| 文件大?。?/td> | 488K |
| 代理商： | SST34HF1642D-70-4E-B1PE |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁當(dāng)前第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁
Advance Information
16 Mbit Concurrent SuperFlash + 2/4/8 Mbit SRAM ComboMemory
SST34HF1602C / SST34HF1622C / SST34HF1642C
SST34HF1642D / SST34HF1682D / SST34HF1622S / SST34HF1642S
19
2004 Silicon Storage Technology, Inc.
S71256-00-000
3/04
TABLE 14: F
LASH
R
EAD
C
YCLE
T
IMING
P
ARAMETERS
V
DD
= 2.7-3.3V
Symbol
T
RC
T
CE
T
AA
T
OE
T
CLZ1
T
OLZ1
T
CHZ1
T
OHZ1
T
OH1
T
RP1
T
RHR1
T
RY1,2
Parameter
Read Cycle Time
Chip Enable Access Time
Address Access Time
Output Enable Access Time
BEF# Low to Active Output
OE# Low to Active Output
BEF# High to High-Z Output
OE# High to High-Z Output
Output Hold from Address Change
RST# Pulse Width
RST# High Before Read
RST# Pin Low to Read
Min
70
Max
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
μs
70
70
35
0
0
20
20
0
500
50
20
T14.0 1256
1. This parameter is measured only for initial qualification and after the design or process change that could affect this parameter.
2. This parameter applies to Sector-Erase, Block-Erase and Program operations. This parameter does not apply to Chip-Erase.
TABLE 15: F
LASH
P
ROGRAM
/E
RASE
C
YCLE
T
IMING
P
ARAMETERS
Symbol
T
BP
T
AS
T
AH
T
CS
T
CH
T
OES
T
OEH
T
CP
T
WP
T
WPH1
T
CPH1
T
DS
T
DH1
T
IDA1
T
ES
T
BY1,2
T
BR1
T
SE
T
BE
T
SCE
Parameter
Word-Program Time
Address Setup Time
Address Hold Time
WE# and BEF# Setup Time
WE# and BEF# Hold Time
OE# High Setup Time
OE# High Hold Time
BEF# Pulse Width
WE# Pulse Width
WE# Pulse Width High
BEF# Pulse Width High
Data Setup Time
Data Hold Time
Software ID Access and Exit Time
Erase-Suspend Latency
RY/BY# Delay Time
Bus# Recovery Time
Sector-Erase
Block-Erase
Chip-Erase
Min
Max
10
Units
μs
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
μs
ns
μs
ms
ms
ms
0
40
0
0
0
10
40
40
30
30
30
0
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
2. This parameter applies to Sector-Erase, Block-Erase, and Program operations.
This parameter does not apply to Chip-Erase operations.
150
20
90
1
25
25
50
T15.0 1256
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SST34HF1642D-70-4E-B1SE | XTAL MTL T/H HC49/U |
| SST34HF1642D-70-4E-L1PE | 16 Mbit Concurrent SuperFlash + 2/4/8 Mbit SRAM ComboMemory |
| SST34HF1642D-70-4E-L1SE | 16 Mbit Concurrent SuperFlash + 2/4/8 Mbit SRAM ComboMemory |
| SST34HF1642D-70-4E-LPE | 16 Mbit Concurrent SuperFlash + 2/4/8 Mbit SRAM ComboMemory |
| SST34HF1642D-70-4E-LSE | XTAL CER SMT 7X5 2PAD |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SST34HF1642D-70-4E-B1SE | 制造商:SST 制造商全稱:Silicon Storage Technology, Inc 功能描述:16 Mbit Concurrent SuperFlash + 2/4/8 Mbit SRAM ComboMemory |
| SST34HF1642D-70-4E-L1PE | 制造商:SST 制造商全稱:Silicon Storage Technology, Inc 功能描述:16 Mbit Concurrent SuperFlash + 2/4/8 Mbit SRAM ComboMemory |
| SST34HF1642D-70-4E-L1SE | 制造商:SST 制造商全稱:Silicon Storage Technology, Inc 功能描述:16 Mbit Concurrent SuperFlash + 2/4/8 Mbit SRAM ComboMemory |
| SST34HF1642D-70-4E-LPE | 制造商:SST 制造商全稱:Silicon Storage Technology, Inc 功能描述:16 Mbit Concurrent SuperFlash + 2/4/8 Mbit SRAM ComboMemory |
| SST34HF1642D-70-4E-LSE | 制造商:SST 制造商全稱:Silicon Storage Technology, Inc 功能描述:16 Mbit Concurrent SuperFlash + 2/4/8 Mbit SRAM ComboMemory |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。