- 您現(xiàn)在的位置：買賣IC網 > PDF目錄365698 > SST34HF1642C-70-4E-L1PE (SILICON STORAGE TECHNOLOGY INC) 16 Mbit Concurrent SuperFlash + 2/4/8 Mbit SRAM ComboMemory PDF資料下載
參數資料
| 型號： | SST34HF1642C-70-4E-L1PE |
| 廠商： | SILICON STORAGE TECHNOLOGY INC |
| 元件分類： | 存儲器 |
| 英文描述： | 16 Mbit Concurrent SuperFlash + 2/4/8 Mbit SRAM ComboMemory |
| 中文描述： | SPECIALTY MEMORY CIRCUIT, PBGA56 |
| 封裝： | 8 X 10 MM, 1.40 MM HEIGHT, MO-210, LFBGA-56 |
| 文件頁數： | 1/38頁 |
| 文件大?。?/td> | 488K |
| 代理商： | SST34HF1642C-70-4E-L1PE |
當前第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁
2004 Silicon Storage Technology, Inc.
S71256-00-000
1
3/04
The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc. Intel is a registered trademark of Intel Corporation.
CSF and ComboMemory are trademarks of Silicon Storage Technology, Inc.
These specifications are subject to change without notice.
Advance Information
FEATURES:
Flash Organization: 1M x16 or 2M x8
Dual-Bank Architecture for Concurrent
Read/Write Operation
– 16 Mbit: 4 Mbit + 12 Mbit
(P)SRAM Organization:
– 2 Mbit: 128K x16 or 256K x8
– 4 Mbit: 256K x16 or 512K x8
– 8 Mbit: 512K x16 or 1024K x8
Single 2.7-3.3V Read and Write Operations
Superior Reliability
– Endurance: 100,000 Cycles (typical)
– Greater than 100 years Data Retention
Low Power Consumption:
– Active Current: 25 mA (typical)
– Standby Current: 20 μA (typical)
Hardware Sector Protection (WP#)
– Protects 4 outer most sectors (4 KWord) in the
larger bank by holding WP# low and unprotects
by holding WP# high
Hardware Reset Pin (RST#)
– Resets the internal state machine to reading
data array
Byte Selection for Flash (CIOF pin)
– Selects 8-bit or 16-bit mode
Sector-Erase Capability
– Uniform 2 KWord sectors
Block-Erase Capability
– Uniform 32 KWord blocks
Read Access Time
– Flash: 70 ns
– (P)SRAM: 70 ns
Erase-Suspend / Erase-Resume Capabilities
Security ID Feature
– SST: 128 bits
– User: 128 bits
Latched Address and Data
Fast Erase and Word-/Byte-Program (typical):
– Sector-Erase Time: 18 ms
– Block-Erase Time: 18 ms
– Chip-Erase Time: 35 ms
– Word-Program Time: 7 μs
Automatic Write Timing
– Internal
V
PP
Generation
End-of-Write Detection
– Toggle Bit
– Data# Polling
– Ready/Busy# pin
CMOS I/O Compatibility
JEDEC Standard Command Set
Packages Available
– 56-ball LFBGA (8mm x 10mm)
– 62-ball LFBGA (8mm x 10mm)
PRODUCT DESCRIPTION
The SST34HF16x2C/D/S ComboMemory devices inte-
grate either a 1M x16 or 2M x8 CMOS flash memory bank
with either a 128K x16/256K x8, 256K x16/512 x8, or 512K
x16/1024K x8 CMOS SRAM or pseudo SRAM (PSRAM)
memory bank in a multi-chip package (MCP). These
devices are fabricated using SST’s proprietary, high-perfor-
mance CMOS SuperFlash technology incorporating the
split-gate cell design and thick-oxide tunneling injector to
attain better reliability and manufacturability compared with
alternate approaches. The SST34HF16x2C/D/S devices
are ideal for applications such as cellular phones, GPS
devices, PDAs, and other portable electronic devices in a
low power and small form factor system.
The SST34HF16x2C/D/S feature dual flash memory bank
architecture allowing for concurrent operations between the
two flash memory banks and the (P)SRAM. The devices
can read data from either bank while an Erase or Program
operation is in progress in the opposite bank. The two flash
memory banks are partitioned into 4 Mbit and 12 Mbit with
top sector protection options for storing boot code, program
code, configuration/parameter data and user data.
The SuperFlash technology provides fixed Erase and Pro-
gram times, independent of the number of Erase/Program
cycles that have occurred. Therefore, the system software
or hardware does not have to be modified or de-rated as is
necessary with alternative flash technologies, whose Erase
and Program times increase with accumulated Erase/Pro-
gram cycles. The SST34HF16x2C/D/S devices offer a
guaranteed endurance of 10,000 cycles. Data retention is
rated at greater than 100 years. With high performance
Word-Program, the flash memory banks provide a typical
Word-Program time of 7 μsec. The entire flash memory
bank can be erased and programmed word-by-word in typ-
ically 4 seconds for the SST34HF16x2C/D/S, when using
interface features such as Toggle Bit, Data# Polling, or RY/
BY# to indicate the completion of Program operation. To
16 Mbit Concurrent SuperFlash + 2/4/8 Mbit SRAM ComboMemory
SST34HF1602C / SST34HF1622C / SST34HF1642C
SST34HF1642D / SST34HF1682D / SST34HF1622S / SST34HF1642S
SST34HF16x2x16Mb CSF + 2/4/8 Mb SRAM (x16) MCP ComboMemory
相關PDF資料 |
PDF描述 |
|---|---|
| SST34HF1602D-70-4C-LSE | 15V 0.2A, Wide-Input Integrated Switching Regulator 3-SIP MODULE |
| SST34HF1602D-70-4E-LPE | 16 Mbit Concurrent SuperFlash + 2/4/8 Mbit SRAM ComboMemory |
| SST34HF1602D-70-4E-LSE | 16 Mbit Concurrent SuperFlash + 2/4/8 Mbit SRAM ComboMemory |
| SST34HF1602S-70-4C-B1SE | 16 Mbit Concurrent SuperFlash + 2/4/8 Mbit SRAM ComboMemory |
| SST34HF1602S-70-4C-LPE | 16 Mbit Concurrent SuperFlash + 2/4/8 Mbit SRAM ComboMemory |
相關代理商/技術參數 |
參數描述 |
|---|---|
| SST34HF1642C-70-4E-L1SE | 制造商:SST 制造商全稱:Silicon Storage Technology, Inc 功能描述:16 Mbit Concurrent SuperFlash + 2/4/8 Mbit SRAM ComboMemory |
| SST34HF1642C-70-4E-LPE | 制造商:SST 制造商全稱:Silicon Storage Technology, Inc 功能描述:16 Mbit Concurrent SuperFlash + 2/4/8 Mbit SRAM ComboMemory |
| SST34HF1642C-70-4E-LSE | 制造商:SST 制造商全稱:Silicon Storage Technology, Inc 功能描述:16 Mbit Concurrent SuperFlash + 2/4/8 Mbit SRAM ComboMemory |
| SST34HF1642D | 制造商:SST 制造商全稱:Silicon Storage Technology, Inc 功能描述:16 Mbit Concurrent SuperFlash + 2/4/8 Mbit SRAM ComboMemory |
| SST34HF1642D-70-4C-B1PE | 制造商:SST 制造商全稱:Silicon Storage Technology, Inc 功能描述:16 Mbit Concurrent SuperFlash + 2/4/8 Mbit SRAM ComboMemory |
發(fā)布緊急采購，3分鐘左右您將得到回復。