參數(shù)資料
型號(hào)： SST34HF1602S-70-4E-B1PE
廠商： Silicon Storage Technology, Inc.
元件分類： 組合存儲(chǔ)器
英文描述： 16 Mbit Concurrent SuperFlash + 2/4/8 Mbit SRAM ComboMemory
中文描述： 16兆兆位并行的SuperFlash 2/4/8 SRAM的ComboMemory
文件頁(yè)數(shù)： 20/38頁(yè)
文件大小： 488K
代理商： SST34HF1602S-70-4E-B1PE
20
Advance Information
16 Mbit Concurrent SuperFlash + 2/4/8 Mbit SRAM ComboMemory
SST34HF1602C / SST34HF1622C / SST34HF1642C
SST34HF1642D / SST34HF1682D / SST34HF1622S / SST34HF1642S
2004 Silicon Storage Technology, Inc.
S71256-00-000
3/04
FIGURE 5: (P)SRAM R
EAD
C
YCLE
T
IMING
D
IAGRAM
FIGURE 6: (P)SRAM W
RITE
C
YCLE
T
IMING
D
IAGRAM
(WE# C
ONTROLLED
)
1
ADDRESSES A
MSS-0
DQ
15-0
UBS#, LBS#
OE#
BES1#
BES2
T
RCS
T
AAS
T
BES
T
OES
T
BLZS
T
OLZS
T
BYES
T
BYLZS
T
BYHZS
DATA VALID
T
OHZS
T
BHZS
T
OHS
1256 F04.0
T
BES
Note:
A
MSS
= Most Significant Address
A
MSS
= A
16
for SST34HF1622C/S, A
17
for SST34HF1622C/D/S, and A
18
for SST34HF1682D
For SST34HF16x2S, LBS# and UBS# are No Connect and in x8 mode, the additional SRAM address is SA.
T
AWS
ADDRESSES AMSS3-0
BES1#
BES2
WE#
UBS#, LBS#
T
WPS
T
WRS
T
WCS
T
ASTS
T
BWS
T
BWS
T
BYWS
T
ODWS
T
OEWS
T
DHS
T
DSS
1256 F05.0
NOTE 2
NOTE 2
DQ15-8, DQ7-0
VALID DATA IN
Note:
1. If OE# is High during the Write cycle, the outputs will remain at high impedance.
2. If BES1# goes Low or BES2 goes high coincident with or after WE# goes Low, the output will remain at high impedance.
If BES1# goes High or BES2 goes low coincident with or before WE# goes High, the output will remain at high impedance.
Because D
IN
signals may be in the output state at this time, input signals of reverse polarity must not be applied.
3. A
MSS
= Most Significant SRAM Address
A
MSS
= A
16
for SST34HF1622C/S, A
17
for SST34HF1622C/D/S, and A
18
for SST34HF1682D
For SST34HF16x2S, LBS# and UBS# are No Connect and in x8 mode, the additional SRAM address is SA.
相關(guān)PDF資料
PDF描述
SST34HF1622S-70-4E-B1PE 16 Mbit Concurrent SuperFlash + 2/4/8 Mbit SRAM ComboMemory
SST34HF1642S-70-4E-B1PE 16 Mbit Concurrent SuperFlash + 2/4/8 Mbit SRAM ComboMemory
SST34HF1682S-70-4E-B1PE 16 Mbit Concurrent SuperFlash + 2/4/8 Mbit SRAM ComboMemory
SST34HF1622C-70-4C-L1PE 16 Mbit Concurrent SuperFlash + 2/4/8 Mbit SRAM ComboMemory
SST34HF1642C-70-4C-L1PE 16 Mbit Concurrent SuperFlash + 2/4/8 Mbit SRAM ComboMemory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SST34HF1602S-70-4E-B1SE 制造商:SST 制造商全稱:Silicon Storage Technology, Inc 功能描述:16 Mbit Concurrent SuperFlash + 2/4/8 Mbit SRAM ComboMemory
SST34HF1602S-70-4E-L1PE 制造商:SST 制造商全稱:Silicon Storage Technology, Inc 功能描述:16 Mbit Concurrent SuperFlash + 2/4/8 Mbit SRAM ComboMemory
SST34HF1602S-70-4E-L1SE 制造商:SST 制造商全稱:Silicon Storage Technology, Inc 功能描述:16 Mbit Concurrent SuperFlash + 2/4/8 Mbit SRAM ComboMemory
SST34HF1602S-70-4E-LPE 制造商:SST 制造商全稱:Silicon Storage Technology, Inc 功能描述:16 Mbit Concurrent SuperFlash + 2/4/8 Mbit SRAM ComboMemory
SST34HF1602S-70-4E-LSE 制造商:SST 制造商全稱:Silicon Storage Technology, Inc 功能描述:16 Mbit Concurrent SuperFlash + 2/4/8 Mbit SRAM ComboMemory
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