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參數(shù)資料
| 型號(hào)： | SST34HF1601-90-4C-L1P |
| 廠商： | Silicon Storage Technology, Inc. |
| 元件分類： | 組合存儲(chǔ)器 |
| 英文描述： | 16 Mbit Concurrent SuperFlash + 8 Mbit SRAM ComboMemory |
| 中文描述： | 16兆位的SuperFlash 8兆位并行SRAM的ComboMemory |
| 文件頁(yè)數(shù)： | 7/30頁(yè) |
| 文件大?。?/td> | 472K |
| 代理商： | SST34HF1601-90-4C-L1P |
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Advance Specifications
16 Mbit Concurrent SuperFlash + 8 Mbit SRAM ComboMemory
SST34HF1681
7
2001 Silicon Storage Technology, Inc.
S71214-00-000
12/01 561
FIGURE 2: P
IN
A
SSIGNMENTS
FOR
56-
BALL
LFBGA (8
MM
X
10
MM
) C
OMBO
M
EMORY
P
INOUT
TABLE
2: P
IN
D
ESCRIPTION
Symbol
A
MS1
to A
0
Pin Name
Address Inputs
Functions
To provide flash address, A
19
-A
0
.
To provide SRAM address, A
18
-A
0
To output data during Read cycles and receive input data during Write cycles.
Data is internally latched during a flash Erase/Program cycle. The outputs are in
tri-state when OE# is high or BES1# is high or BES2 is low and BEF# is high.
To activate the Flash memory bank when BEF# is low
SRAM Memory Bank Enable To activate the SRAM memory bank when BES1# is low
SRAM Memory Bank Enable To activate the SRAM memory bank when BES2 is high
Output Enable
To gate the data output buffers
Write Enable
To control the Write operations
Upper Byte Control (SRAM)
To enable DQ
15
-DQ
8
Lower Byte Control (SRAM)
To enable DQ
7
-DQ
0
Write Protect
To protect and unprotect sectors from Erase or Program operation
Reset
To Reset and return the device to Read mode
Ready/Busy#
To output the status of a Program or Erase Operation
RY/BY# is a open drain output, so a 10K
- 100K
pull-up resistor is required to
allow RY/BY# to transition high indicating the device is ready to read.
Ground
Power Supply (Flash)
2.7-3.3V Power Supply to Flash only
Power Supply (SRAM)
2.7-3.3V Power Supply to SRAM only
No Connection
Unconnected pins
1. A
MS
= Most Significant Address
DQ
15
-DQ
0
Data Inputs/Outputs
BEF#
BES1#
BES2
OE#
WE#
UBS#
LBS#
WP#
RST#
RY/BY#
Flash Memory Bank Enable
V
SS
V
DD
F
V
DD
S
NC
T2.1 561
561 ILL F03.0
A11
A8
WE#
WP#
LBS#
A7
A15
A12
A19
BES2
RST#
UBS#
A6
A3
NC
A13
A9
NC
RY/BY#
A18
A5
A2
NC
A14
A10
A17
A4
A1
A16
NC
DQ6
DQ1
VSS
A0
NC
DQ15
DQ13
DQ4
DQ3
DQ9
OE#
BEF#
VSS
DQ7
DQ12
VDDS
VDDF
DQ10
DQ0
BES1#
DQ14
DQ5
NC
DQ11
DQ2
DQ8
A B C D E F G H
SST34HF1681
8
7
6
5
4
3
2
1
TOP VIEW (balls facing down)
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| SST34HF1602D-70-4C-B1SE | 16 Mbit Concurrent SuperFlash + 2/4/8 Mbit SRAM ComboMemory |
| SST34HF1602D-70-4C-L1PE | 16 Mbit Concurrent SuperFlash + 2/4/8 Mbit SRAM ComboMemory |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SST34HF1601-90-4C-LFP | 制造商:SST 制造商全稱:Silicon Storage Technology, Inc 功能描述:16 Mbit Concurrent SuperFlash + 2 / 4 Mbit SRAM ComboMemory |
| SST34HF1601-90-4E-L1P | 制造商:SST 制造商全稱:Silicon Storage Technology, Inc 功能描述:16 Mbit Concurrent SuperFlash + 8 Mbit SRAM ComboMemory |
| SST34HF1601-90-4E-LFP | 制造商:SST 制造商全稱:Silicon Storage Technology, Inc 功能描述:16 Mbit Concurrent SuperFlash + 2 / 4 Mbit SRAM ComboMemory |
| SST34HF1602C | 制造商:SST 制造商全稱:Silicon Storage Technology, Inc 功能描述:16 Mbit Concurrent SuperFlash + 2/4/8 Mbit SRAM ComboMemory |
| SST34HF1602C-70-4C-B1PE | 制造商:SST 制造商全稱:Silicon Storage Technology, Inc 功能描述:16 Mbit Concurrent SuperFlash + 2/4/8 Mbit SRAM ComboMemory |
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