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參數(shù)資料
| 型號： | SST32HF164-90-4E-TBK |
| 廠商： | SILICON STORAGE TECHNOLOGY INC |
| 元件分類： | 存儲器 |
| 英文描述： | Multi-Purpose Flash (MPF) + SRAM ComboMemory |
| 中文描述： | SPECIALTY MEMORY CIRCUIT, PBGA48 |
| 封裝： | 10 X 12 MM, 1.20 MM HEIGHT, TBGA-48 |
| 文件頁數(shù)： | 12/28頁 |
| 文件大?。?/td> | 342K |
| 代理商： | SST32HF164-90-4E-TBK |
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12
Data Sheet
Multi-Purpose Flash (MPF) + SRAM ComboMemory
SST32HF802 / SST32HF162 / SST32HF164
2001 Silicon Storage Technology, Inc.
S71171-05-000
8/01
520
FIGURE 3: SRAM R
EAD
C
YCLE
T
IMING
D
IAGRAM
FIGURE 4: SRAM W
RITE
C
YCLE
T
IMING
D
IAGRAM
(WE# C
ONTROLLED
)
1
ADDRESSES AMSS-0
DQ15-0
UBS#, LBS#
Note: WE# remains High (VIH) for the Read cycle
AMSS = Most Significant SRAM Address
OE#
BES#
TRCS
TAAS
TBES
TOES
TBLZS
TOLZS
TBYES
TBYLZS
TBYHZS
DATA VALID
TOHZS
TBHZS
TOHS
520 ILL F21.0
TAWS
ADDRESSES AMSS-0
BES#
WE#
UBS#, LBS#
Notes: 1. If OE# is High during the Write cycle, the outputs will remain at high impedance.
2. If BES# goes Low coincident with or after WE# goes Low, the output will remain at high impedance.
If BES# goes High coincident with or before WE# goes High, the output will remain at high impedance.
Because DIN signals may be in the output state at this time, input signals of reverse polarity must not be applied.
TWPS
TWRS
TWCS
TASTS
TBWS
TBYWS
TODWS
TOEWS
TDHS
TDSS
520 ILL F27.1
NOTE 2
NOTE 2
DQ15-8, DQ7-0
VALID DATA IN
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| SST32HF1681 | 制造商:SST 制造商全稱:Silicon Storage Technology, Inc 功能描述:Multi-Purpose Flash Plus + SRAM ComboMemory |
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| SST32HF1682-70-4C-LFSE | 制造商:SST 制造商全稱:Silicon Storage Technology, Inc 功能描述:Multi-Purpose Flash Plus + SRAM ComboMemory |
| SST32HF1682-70-4C-LS | 制造商:SST 制造商全稱:Silicon Storage Technology, Inc 功能描述:Multi-Purpose Flash Plus + SRAM ComboMemory |
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